DSpace at KISTKIST Conference Paper2000

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dc.contributor.authorLee, Seok-
dc.date.accessioned2024-01-12T10:11:23Z-
dc.date.available2024-01-12T10:11:23Z-
dc.date.created2022-01-14-
dc.date.issued2000-06-14-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84370-
dc.titleDependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNX capping layer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation, pp.36 - 0-
dc.citation.startPage36-
dc.citation.endPage0-
dc.relation.isPartOfAPS meeting 2000-
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KIST Conference Paper > 2000
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