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Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNX capping layer

Authors

Lee, Seok

Issue Date

2000-06-14

Citation

, pp.36 - 0

URI

https://pubs.kist.re.kr/handle/201004/84370

Appears in Collections:

KIST Conference Paper > 2000

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