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Enhancement of memory window in the metal/ferroelectric/insulator/semiconductor field effect transitor

Authors

Kim, Yong Tae

Issue Date

1998-07-01

Citation

ECAPD IV '98/ISAF XI '98/Electroceramic VI '98, pp.0

URI

https://pubs.kist.re.kr/handle/201004/85401

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KIST Conference Paper > Others

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