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Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment

Authors

Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Shim Jae Phil; Subin Lee; Kim Hyung-jun; Byeong-Kwon Ju; Sanghyeon Kim

Publisher

2.5~7, 강원 하이원리조트

Citation

한국반도체학술대회

URI

https://pubs.kist.re.kr/handle/201004/87181

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KIST Conference Paper > Others

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