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dc.contributor.authorDae-Young Jeon-
dc.contributor.authorTim Baldauf-
dc.contributor.authorSo Jeong Park-
dc.contributor.authorSebastian Pregl-
dc.contributor.authorLarysa Baraban-
dc.contributor.authorGianaurelio Cuniberti-
dc.contributor.authorThomas Mikolajick-
dc.contributor.authorWalter M. Weber-
dc.date.accessioned2024-01-12T13:09:56Z-
dc.date.available2024-01-12T13:09:56Z-
dc.date.created2021-09-29-
dc.identifier.issn2378-6558-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/87664-
dc.languageEnglish-
dc.publisher9.11~14, 벨기에-
dc.subjectSchottky-barrier transistors-
dc.subjectTCAD-
dc.subjectambipolar behavior-
dc.subjectactivation energy map-
dc.subjectIV contour map-
dc.subjectnull-
dc.subjectoperation mechanism-
dc.subjectnull-
dc.subjecttransconductance-
dc.titleIn-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSolid-State Device Research Conference (ESSDERC), pp.304 - 307-
dc.citation.titleSolid-State Device Research Conference (ESSDERC)-
dc.citation.startPage304-
dc.citation.endPage307-
dc.citation.conferencePlaceUS-
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