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In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs

Authors

Dae-Young Jeon; Tim Baldauf; So Jeong Park; Sebastian Pregl; Larysa Baraban; Gianaurelio Cuniberti; Thomas Mikolajick; Walter M. Weber

Publisher

9.11~14, 벨기에

Citation

Solid-State Device Research Conference (ESSDERC), pp.304 - 307

Keywords

Schottky-barrier transistors; TCAD; ambipolar behavior; activation energy map; IV contour map; operation mechanism; transconductance

ISSN

2378-6558

URI

https://pubs.kist.re.kr/handle/201004/87664

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KIST Conference Paper > Others

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