양자우물 무질서화 기술에서 유전체-반도체 덮개층 조합에 의한 InGaAs/InGaAsP양자우물 밴드갭의 조작방법

Author
최원준강광남김선호이희택이석한일기김회종우덕하
Assignee
한국과학기술연구원
Regitration Date
2002-02-19
Registration No.
326773
Application Date
1999-10-12
Application No.
99-44158
Country
KO
URI
https://pubs.kist.re.kr/handle/201004/88129
Appears in Collections:
KIST Patent > Others
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