Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안지훈 | - |
dc.contributor.author | 쉬라즈 | - |
dc.contributor.author | 하흥용 | - |
dc.date.accessioned | 2024-01-12T17:00:11Z | - |
dc.date.available | 2024-01-12T17:00:11Z | - |
dc.date.issued | 2022-05-17 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/91832 | - |
dc.title | 금속이온 투과방지층을 함유한 고이온선택성 복합 고분자 전해질막 제조 기술 및 이를 이용한 레독스플로우 전지 | - |
dc.type | Patent | - |
dc.date.registration | 2022-05-17 | - |
dc.date.application | 2019-11-22 | - |
dc.identifier.patentRegistrationNumber | 11335931 | - |
dc.identifier.patentApplicationNumber | 16/691610 | - |
dc.publisher.country | US | - |
dc.type.iprs | 특허 | - |
dc.contributor.assignee | 한국과학기술연구원 | - |
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