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dc.contributor.author안지훈-
dc.contributor.author쉬라즈-
dc.contributor.author하흥용-
dc.date.accessioned2024-01-12T17:00:11Z-
dc.date.available2024-01-12T17:00:11Z-
dc.date.issued2022-05-17-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/91832-
dc.title금속이온 투과방지층을 함유한 고이온선택성 복합 고분자 전해질막 제조 기술 및 이를 이용한 레독스플로우 전지-
dc.typePatent-
dc.date.registration2022-05-17-
dc.date.application2019-11-22-
dc.identifier.patentRegistrationNumber11335931-
dc.identifier.patentApplicationNumber16/691610-
dc.publisher.countryUS-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2019
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