고속 에피택셜 리프트오프를 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자

Author
김상현최원준박민수금대명
Assignee
한국과학기술연구원
Regitration Date
2018-07-03
Registration No.
10014216
Application Date
2015-09-15
Application No.
14/854221
Country
US
URI
https://pubs.kist.re.kr/handle/201004/92106
Appears in Collections:
KIST Patent > 2015
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