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Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases

Authors

Yeonghyeon Hwang; Won-Ju Cho; Kim, Yong Tae

Citation

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.124 - 127

Keywords

Diffusion barrier; ALD; WN; surface treatment

URI

https://pubs.kist.re.kr/handle/201004/95709

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KIST Conference Paper > Others

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