1992-07 | Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD. | 김용; 김태환; 김무성; 민석기 |
2008-05 | BiSbTe3/사파이어 박막의 표면형상 개선을 위한 기판의 표면처리 | 권성도; 김진상; 윤석진; 정대용; 주병권 |
- | Carbon doping characteristics in GaAs grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim |
- | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
- | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
1996-07 | CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질 | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
1994-01 | CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성 | 김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기 |
- | Characteristic of Tin Oixde Thin Films on PET Substrate prepared by ECR-MOCVD | Yun-Ho Kook; Yun-Seok Kim; Dong-Jin Byun; Bup-Ju Jeon; Lee, Joong Kee |
- | Characteristics of C-doped GaAs and critical layer thickness. | Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
2006-05-18 | Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer | Shon, Y; Jeon, HC; Park, YS; Lee, S; Kwon, YH; Lee, SJ; Kim, DY; Kim, HS; Kang, TW; Park, YJ; Yoon, CS; Kim, CK; Kim, EK; Kim, Y; Woo, YD |
- | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; MIN BYUNG DON; KIM MOO SUNG; S. K. Park; C. Lee |
- | Characteristics of laser dry etching for AlGaAs/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; 박세기; MIN BYUNG DON; KIM MOO SUNG; 이천 |
1996-01 | Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth. | 김성일; 민석기; 김은규; 박영주; 최원철; 이상훈; 손맹호 |
- | Characteristics of Zinc oxide thin films on PET substrate prepared by Electron Cyclotron Resonance-metal Organic Chemical Vapor Deposition | Park Ji Hun; Dongjin Byun; Lee, Joong Kee |
- | Characteristics of Zince Oxide Thin Films on Poly Ethylene Terephthalate (PET) substrate prepared by ECR-CVD | Park Ji Hun; D.J. Byun; Lee, Joong Kee |
- | Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG |
1991-01 | Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry. | 김용; 김무성; 김상열; 엄경숙; 민석기 |
1994-01 | Characterization of nitrogen-doped TiO2 thin films prepared by metalorganic chemical vapor deposition | 이동헌; 조용수; 이월인; 이전국; 정형진 |
- | Comparison of different substrate pre-treatment for GaN growth by MOCVD | 김현정; Byun Dongjin; Park Dal keun; Kum Dong Wha |
2010-09-01 | Competitive growth mechanisms of InAs quantum dots on InxGa1 (-) As-x layer during post growth interruption | Yang, Changjae; Kim, Jungsub; Sim, Uk; Lee, Jaeyel; Choi, Won Jun; Yoon, Euijoon |
1990-01 | Composition control and annealing effect on the growth of YBaCuO superconducting thin films by RF magnectron sputtering. | 염상섭; 최상삼; 한택상; S. J. Park; Y. H. Kim |
1996-08-05 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | Kim, SI; Kim, MS; Kim, Y; Son, CS; Hwang, SM; Min, BD; Kim, EK; Min, SK |
- | Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4. | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; KIM YOUN |
2003-10-06 | Coordination polyhedron and chemical vapor deposition of Cu(hfacac)(2)(t-BuNH2) | Woo, K; Paek, H; Lee, WI |
1996-01 | Cross sectional analysis of laser etched groove on AlGaAs/GaAs multilayers. | 김성일; 민석기; 박세기; 김은규; 이천 |
2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD | Son, CS; Cho, S; Choi, IH; Kim, SI; Kim, YT; Chung, SW |
1990-03 | Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI). | 김용; 조훈영; 김은규; 윤주훈; 조성호; 김무성; 김현수; 민석기 |
- | Density of states of 2DEG determined from the complex magneto capacitance of a GaAs/AlGaAs heterostructure. | Kim Seong Il; Lee Jung Il; B. B. Goldberg; P. J. Stiles |
1997-10 | Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | Son, SC; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
- | Deposition of aluminum nitride thin film by MOCVD using AlCl₃ : BuNH₂ single source precursor | HAN SUNG HAN; 안창규; 최승철 |