| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 2000 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Min, BD; Park, YJ; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
| 2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
| 1997-08-01 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Kim, Y; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 1997-10 | Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | Son, SC; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-06 | Design and fabrication of a narrow stripe GaAs/AlGaAs quantum wire laser | Kim, TG; Kim, EK; Min, SK; Jeon, JI; Jeon, SJ; Park, JH |
| 2005-08-01 | Diluted magnetic semiconductor of p-type InMnP : Zn epilayer | Shon, Y; Jeon, HC; Park, YS; Lee, SJ; Kim, DY; Kim, HS; Kang, TW; Park, YJ; Yoon, CS; Kim, CK; Kim, EK; Kim, Y; Woo, YD |
| 1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1997-06-02 | Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition | Choi, WC; Kim, EK; Min, SK; Park, CY; Kim, JH; Seong, TY |
| 2002-05-01 | Direct nano-wiring carbon nanotube using growth barrier: A possible mechanism of selective lateral growth | Lee, YH; Jang, YT; Choi, CH; Kim, EK; Ju, BK; Kim, DH; Lee, CW; Yoon, SS |
| 1999-07-12 | Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
| 2001-09-14 | Direct nanowiring of carbon nanotubes for highly integrated electronic and spintronic devices | Lee, YH; Jang, YT; Choi, CH; Kim, DH; Lee, CW; Lee, JE; Han, YS; Yoon, SS; Shin, JK; Kim, ST; Kim, EK; Ju, BK |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 2001-12 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | Park, SK; Park, YJ; Park, YM; Kim, HJ; Kim, EK; Lee, C |
| 2001 | Effects of doping methods on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, M; Hwang, S; Yoo, KH |
| 2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, MH; Hwang, SW; Yoo, KH |
| 2002-03 | Effects of N+-implanted sapphire (0001) substrate on GaN epilayer | Cho, YS; Koh, EK; Park, YJ; Koh, D; Kim, EK; Moon, Y; Leem, SJ; Kim, G; Byun, D |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |
| 1998-12 | Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots | Cho, S; Hyon, CK; Kim, EK; Min, SK |
| 2001-06 | Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs | Cho, S; Kim, EK |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-06 | Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy | Kim, EK; Kim, JS; Hwang, H; Park, K; Yoon, E; Kim, JH; Park, IW; Park, YJ |
| 2004-07 | Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers | Kim, JS; Kim, EK; Hwang, H; Park, K; Yoon, E; Park, IW |
| 2004-10 | Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy | Kim, JS; Kim, EK; Kim, HJ; Yoon, E; Park, IW; Park, YJ |
| 1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
