1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
1990-02-01 | EFFECTS OF LEAKAGE CURRENT ON ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNALS FOR MIDGAP LEVELS IN GAAS | KIM, EK; CHO, HY; MIN, SK; CHOH, SH; NAMBA, S |
2023-10 | Efficient electroluminescence in doped-GaAs via terahertz metamaterials | Kang, Taehee; Song, Jindong; Kim, Dai-Sik; Choi, Geunchang |
1988-12 | EL2 준위에 대한 Photocapacitance quenching 과 열회복 현상 : EL2(III). | 김은규; 조훈영; 민석기 |
1992-12 | ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, TW; KIM, Y; KIM, MS; KIM, EK; MIN, SK |
1990-11 | ELECTRIC-FIELD-ENHANCED DISSOCIATION OF THE HYDROGEN-SI DONOR COMPLEX IN GAAS | CHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, CC |
1999-02 | Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT | Kim, DM; Song, SH; Kim, HJ; Kang, KN |
1993-08 | ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, CC |
2005-06 | Electron Transport of Low Transmission Barrier between Ferromagnet and Two-Dimensional Electron Gas (2DEG) | 구현철; 이현정; 장준연; 한석희; 고재범; J.D.Song |
2011-12-01 | Epitaxial growth of Fe and MgO layers on GaAs (001): Microstructure and magnetic property | Kim, Kyung-Ho; Kim, Hyung-jun; Ahn, Jae-Pyung; Lee, Seung-Cheol; Won, Sung Ok; Choi, Jun Woo; Chang, Joonyeon |
- | Epitaxial growths of Fe and MgO layers on GaAs (001): Microstructure and magnetic property | Kim Kyung-Ho; Kim Hyung-jun; Ahn, Jae Pyoung; Seung-Cheol Lee; Won, Sung Ok; Jun Woo Choi; Chang, Joonyeon; Kim Young Keun |
- | Epitaxial Relationship of Fe/MgO on InxGa1-xAs Substrates | Kim Kyung Ho; Kim Hyung-jun; shin il jae; HAN, JUN HYUN; Han, Suk Hee |
- | Epitaxial technology of compound semiconductor by MOCVD. | KIM MOO SUNG; KIM YOUN; EOM KYUNG SOOK; Kim Seong Il; Min Suk-Ki |
1999-06 | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | Park, YK; Kim, SI; Son, CS |
2020-11-23 | Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings | Jang, Juyeong; Lee, Seunghwan; Kim, Minju; Woo, Sunwoo; Kim, Inhong; Kyhm, Jihoon; Song, Jindong; Taylor, Robert A.; Kyhm, Kwangseuk |
2013-10-21 | Excited exciton and biexciton localised states in a single quantum ring | Kim, H. D.; Kyhm, K.; Taylor, R. A.; Nicolet, A. A. L.; Potemski, M.; Nogues, G.; Je, K. C.; Lee, E. H.; Song, J. D. |
1994-01 | Experimental and computational analysis of AlGaAs/GaAs/InGaAs heteroface solar cells grown by low-pressure MOCVD. | 김성일; 민석기; 김용; 김무성; 안준오; 박양근 |
- | Fabrication and dc characterization of submicron gate GaAs MESFET. | KANG KWANG NHAM |
2004-01-15 | Fabrication and properties of As-doped ZnO films grown on GaAs(001) substrates by radio frequency (rf) magnetron sputtering | Lee, W; Hwang, DK; Jeong, MC; Lee, M; Oh, MS; Choi, WK; Myoung, JM |
1990-01 | Fabrication of AlGaAs/GaAs HEMT grown by MOCVD. | 김무성; 김용; 엄경숙; 김성일; 민석기 |
1999-12 | Fabrication of AlGaAs/GaAs heteroface solar cells | Kim, H.-J.; Park, Y.K.; Kim, S.-I.; Kim, E.K.; Kim, T.-W. |
2009-04 | Fabrication of coupled GaAs quantum dots and their optical properties | Kim, J.S.; Song, J.D.; Byeon, C.C.; Kang, H.; Jeong, M.S.; Cho, N.K.; Park, S.J.; Choi, W.J.; Lee, J.I.; Kim, J.S.; Leem, J.-Y.; Yim, S.-Y.; Ko, D.-K.; Lee, J. |
- | Fabrication of GaAs/AlGaAs DH laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM MOO SUNG |
- | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
- | Fabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy | Kim Seong Il; Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae |
- | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
- | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
1993-01 | Fabrication of single GaAs substrate by MOCVD. | 김성일; 민석기; 김용; 김무성; 이민석; 김영덕 |
1992-01 | Fabrication of single quantum well separate confinement heterostructure laser diode grown by MOCVD. | 김성일; 민석기; 김용; 김무성; 엄경숙; C. J. Kim; H. S. Oh |