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Showing results 38 to 67 of 83

Issue DateTitleAuthor(s)
2014-04Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief LayerOh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J.
2013-04-21Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflectionLee, E. H.; Song, J. D.; Yoon, J. J.; Bae, M. H.; Han, I. K.; Choi, W. J.; Chang, S. K.; Kim, Y. D.; Kim, J. S.
2019-10-16Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike TransitionsKoong, Z. X.; Scerri, D.; Rambach, M.; Santana, T. S.; Park, S., I; Song, J. D.; Gauger, E. M.; Gerardot, B. D.
2014-03Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structureYoen, K. H.; Lee, E. H.; Kim, S. Y.; Park, T. E.; Bae, M. H.; Song, J. D.
2011-09Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dotsLim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S.
2018-11Growth of pure wurtzite InGaAs nanowires for photovoltaic and energy harvesting applicationsKang, H. -K.; Kim, J. Y.; Noh, M. -S.; Kang, C. -Y.; Kim, Y. D.; Cho, M. -H.; Song, J. D.
2011-11High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced EpitaxyHa, S. K.; Song, J. D.; Han, I. K.; Ko, D. Y.; Kim, S. Y.; Lee, E. H.
2008-12Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dotsArpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I.
2014-11-06InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 KPark, M. S.; Jain, V.; Lee, E. H.; Kim, S. H.; Pettersson, H.; Wang, Q.; Song, J. D.; Choi, W. J.
2009-10-19Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formationDasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S.
2013-03-11Interband transitions and dielectric functions of InGaSb alloysKim, T. J.; Yoon, J. J.; Byun, J. S.; Hwang, S. Y.; Aspnes, D. E.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Barange, N. S.; Kim, J. Y.; Kim, Y. D.
2009-09-14Interband transitions of InAsxSb1-x alloy filmsKim, T. J.; Yoon, J. J.; Hwang, S. Y.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D.
2020-03-04Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodesAhn, D.; Song, J. D.; Kang, S. S.; Lim, J. Y.; Yang, S. H.; Ko, S.; Park, S. H.; Park, S. J.; Kim, D. S.; Chang, H. J.; Chang, Joonyeon
2006-10Low frequency noise in GaAs structures with embedded In(Ga)As quantum dotsLee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A.
2014-09Low gain threshold density of a single InGaP quantum well sandwiched by digital alloyKim, B.; Kyhm, K.; Je, K. C.; Song, J. D.; Kim, S. Y.; Le, E. H.; Taylor, R. A.
2018-08Magneto-optical Transitions of GaAs/AlGaAs Multiple Quantum WellsKim, Yongmin; Song, J. D.; Kohama, Y.
2006-12-15MBE growth and optical properties of highly tensile-strained In1-xGaxAs/In-0.52(Ga0.4Al0.6)(0.48)As multi-quantum-wells using digital alloyKim, J. M.; Park, C. Y.; Lee, Y. T.; Song, J. D.
2016-05-26Memory characteristics of capacitors with poly-GaAs floating gatesRoh, I. P.; Kang, N. S.; Shin, S. H.; Oh, Y. T.; Kim, K. B.; Song, J. D.; Song, Y. H.
2018-05Metallic Nano-Rings for Efficient, Broadband Light Extraction from Solid-State Single-Photon SourcesTrojak, Oliver J.; Woodhead, C. S.; Sapienza, L.; Young, R. J.; Song, J. D.
2008-08Metamorphic growth of InAlAs/InGaAs MQW and InAsHEMT structures on GaAsJoo, K. S.; Chun, S. H.; Lim, J. Y.; Song, J. D.; Chang, J. Y.
2009-07-01Nanometer-scale measurements of electronic states in InAs/GaAs quantum dotsDasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.
2014-08-29Near-Unity Coupling Efficiency of a Quantum Emitter to a Photonic Crystal WaveguideArcari, M.; Sollner, I.; Javadi, A.; Hansen, S. Lindskov; Mahmoodian, S.; Liu, J.; Thyrrestrup, H.; Lee, E. H.; Song, J. D.; Stobbe, S.; Lodahl, P.
2014-10New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with CrShon, Yoon; Lee, J. W.; Lee, D. J.; Yoon, I. T.; Kwon, Y. H.; Kim, H. S.; Kang, T. W.; Kyhm, J. H.; Song, J. D.; Koo, H. C.; Fu, D. J.; Park, C. S.; An, H. H.; Yoon, Chong S.; Kim, E. K.
2009-11-30Observation of new critical point in InxAl1-xAs alloy using spectroscopic ellipsometryYoon, J. J.; Ghong, T. H.; Byun, J. S.; Kang, Y. J.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D.
2006-05Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sourcesSong, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T.
2014-07Optical anisotropy and diamagnetic energy shifts in InP-GaP lateral quantum wellsShin, Y. H.; Kim, Yongmin; Song, J. D.; Lee, Y. T.; Saito, H.; Nakamura, D.; Matsuda, Y. H.; Takeyama, S.
2014-06Optical anisotropy in InP string-like aligned quantum dotsKim, Yongmin; Song, J. D.; Han, I. K.
2006-11-01Optical characterization of digital alloy In0.49Ga0.51P/In-0.49(Ga0.6Al0.4)(0.51)P multi-quantum-wells grown by molecular beam epitaxyKim, J. M.; Park, C. Y.; Lee, Y. T.; Song, J. D.
2013-07-01Optical properties of AlAsxSb1-x alloys determined by in situ ellipsometryKim, J. Y.; Yoon, J. J.; Kim, T. J.; Kim, Y. D.; Lee, E. H.; Bae, M. H.; Song, J. D.; Choi, W. J.; Liang, C. -T.; Chang, Y. -C.
2008-04-14Optical properties of InxAl1-xAs alloy filmsYoon, J. J.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Aspnes, D. E.; Kim, H. J.; Chang, Y. C.; Song, J. D.
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