Browsing byAuthorLee Suyoun

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Showing results 7 to 17 of 17

Issue DateTitleAuthor(s)
-Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTeLEE, TAEK SUNG; Lee Hyun Seok; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Jooho; CHEONG, BYUNG KI
-Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTeWu Zhe; Park Young Wook; Hyung-Woo Ahn; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kwangsoo No; CHEONG, BYUNG KI
-Investigation on the improved superresolution effect by nitorgen addition in Ge-doped SbTeLee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI
-Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory MaterialWu Zhe; Lee Suyoun; Jeung-hyun Jeong; Kim Inho; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-New technique of measuring a spin polarization in patterned device by using scanning point contact Andreev reflection method김경호; Lee Suyoun; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee
-Spectroscopic Ellipsometry and Raman Spectroscopy of Ge-doped SbTe Thin FilmsJun-Woo Park; Hosun Lee; Tae Dong Kang; Andrei Sirenko; Lee Hyun Seok; Lee Suyoun; Jeung-hyun Jeong; CHEONG, BYUNG KI
-Study on Readout Mechanism of Superresolution Read-Only-Memory Disc with Te-based Chalcogenide Thin Films Using Blue laserLee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI
-The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTePark Young-wook; Lee Hyun Seok; Hyung-Woo Ahn; Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kyung-woo Yi; CHEONG, BYUNG KI
-Unipolar Switching in Pt/GeSexTe1-x/PtJeong, Doo Seok; Son, Seo-hee; Lee Suyoun; CHEONG, BYUNG KI
-(Undefined)Lee Hyun Seok; LEE, TAEK SUNG; Youngwoon Lee; Jooho Kim; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI
-(Undefined)Lee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI

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