| - | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | KIM EUN KYU; KIM TAE-GEUN; SON CHANG-SIK; 황성민; Min Suk-Ki |
| - | Growth and characterization of GaAs layer by molecular beam epitaxy. | KIM EUN KYU; Min Suk-Ki; S. W. Lee; H. Y. Cho; H. S. Kim; J. H. Park |
| - | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
| - | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |
| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | High uniform growth of epilayers by LPMOCVD. | KIM MOO SUNG; KIM YOUN; CHO HOON YOUNG; 강명주; Kim Seong Il; Min Suk-Ki |
| - | Improved growth techniques for GaAs single crystal. | Park Young Ju; PARK SEUNG-CHEOL; 한철원; Min Suk-Ki; 심광보 |
| - | Ionization energy of Ge in AlGaAs | KIM HEO JEN; Kim Seong Il; CHOI WON CHEOL; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Laser direct dry etching for Al//0//.//3Ga//0//.//7As/GaAs multi-layer structure. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; 박세기; 이천 |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | Lateral mode behavior of GaAs/AlGaAs DH laser diode by computer simulation. | Kim Seong Il; Min Suk-Ki |
| - | Luminescence study of carbon doped GaAs grown on GaAs(311)A substrate by MOCVD | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee; SON CHANG-SIK; CHOI WON CHEOL; Kim Seong Il |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | MOCVD 로 성장시킨 GaAs/AlGaAs DH laser diode 의 발진 특성 및 computer simulation 에 의한 횡모드 거동 . | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Modeling for GaAs/AlGaAs buried heterostructure laser diode. | Kim Seong Il; EOM KYUNG SOOK; Min Suk-Ki |
| - | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon. | PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki |
| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| - | New technique for application of large-area GaAs/AlGaAs quantum wire arrays to low threshold and high power laser. | KIM EUN KYU; Min Suk-Ki; T. G. Kim; J. H. Park; K. H. Park; S. M. Hwang; C. S. Son; Kim Seong Il; M. S. Kim |
| 1996-01 | Nitrogen effects of Ta-Si-N diffusion barrier in Si/Cu metallization. | Kim Yong Tae; S. P. Jeong; D. J. Kim; J. W. Park; Min Suk-Ki |
| 1994-01 | Nitrogen implanted tungsten thin films for Cu diffusion barrier. | Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Optical characterization of self-organized InAs quantum dots grown by molecular beam epitaxy | KIM EUN KYU; Min Suk-Ki; S. Cho; C. S. Oh; 한철구 |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | KIM HEO JEN; 이대욱; 김태환; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Performance of plasma deposited tungsten nitride diffusion barrier for Al and Au metallizations. | Kim Yong Tae; 이창우; Min Suk-Ki |
| 1994-01 | Post annealing characteristics of RF magnetron sputtered PbTiO//3 films. | Kim Yong Tae; H. N. Lee; J. G. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
| - | Pulsed excimer laser annealing effects of ion implanted silicon on insulator. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; Kim Yong Tae; KIM CHUN KEUN; KIM MOO SUNG |
