| 2001-03 | Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes | Han, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2001-12 | Low frequency noise in HEMT structure | Han, IK; Lee, JI; Brini, J; Chovet, A |
| 2000-12 | Low frequency noise spectroscopy for Schottky contacts | Lee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC |
| 2003-09 | Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 1998-08 | Optical characterization of GaAs/AlAs short period superlattices | Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC |
| 2003-10 | Optical properties of GaAs/AlGaAs quantum dots grown by droplet epitaxy with post-growth annealing | Lee, CM; Lee, JI; Lee, DH; Leem, JY; Han, IK; Koguchi, N |
| 2002-11 | Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing | Lee, CM; Noh, SK; Lee, JI; Lee, DH; Leem, JY; Han, IK; Mano, T; Koguchi, N |
| 2002-09 | Optical properties of InGaN/GaN multiple quantum wells | Lee, JI; Lee, CM; Leem, JY; Lim, KS; Han, IK |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2002 | P-channel MODFET as an optoelectronic detector | Kim, HJ; Kim, DM; Han, IK; Choi, WJ; Zimmermann, J; Lee, J |
| 2004-02-09 | Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | Song, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH |
| 2005-11 | Performance improvement of high-power AlGaAs lasers | Kim, KC; Kim, TG; Sung, YM; Choi, YC; Park, YJ; Han, IK; Lee, SW; Moon, GW; Yoon, SH; Jang, KY; Park, JI |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | Lee, CM; Choi, SH; Kim, CS; Noh, SK; Lee, JI; Lim, KY; Han, IK |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2005-03 | Poly (4-vinylimidazole) as nonviral gene carrier: in vitro and in vivo transfection | Ihm, JE; Han, KO; Hwang, CS; Kang, JH; Ahn, KD; Han, IK; Han, DK; Hubbell, JA; Cho, CS |
| 2001 | Role of inserting layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, HJ; Lee, JH; Park, YM; Kim, EK; Choi, WJ; Han, IK; Lee, C |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 1997-05-15 | Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy | Han, IK; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Kim, Y; Lim, H; Park, HL |
| 2004-08 | Structural, optical, and electrical characterizations of a quantum cascade laser structure | Park, HK; Kim, JS; Kim, EK; Lee, CH; Song, JD; Han, IK |
| 2005-07 | Study of chirped quantum dot superluminescent diodes | Han, IK; Bae, HC; Cho, WJ; Lee, JI; Park, HL; Kim, TG; Lee, JI |
| 1997-06 | Study of defects generated from a nitridation of GaAs surface | Park, YJ; Kim, EK; Han, IK; Min, SK; OKeeffe, P; Mutoh, H; Munekata, H; Kukimoto, H |
| 2004-08 | Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure | Heo, D; Han, IK; Lee, JI; Jeong, J |
| 2004-11 | Study on superluminescent diodes using InGaAs-InAs chirped quantum dots | Han, IK; Heo, DC; Song, JD; Lee, JI |
| 2002 | Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer | Han, IK; Heo, DC; Choi, WJ; Lee, JI |
| 1996-10-01 | Thermal stability of sulfur-treated InP investigated by photoluminescence | Han, IK; Woo, DH; Kim, HJ; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Lim, H; Park, HL |
| 2003-02 | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO2 capping layers | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; E. K. Kim; C. M. Lee; H.-W. Kim |
| 2005-04 | Three-modal size distribution of self-assembled InAs quantum dots | Lee, CM; Choi, SH; Noh, SK; Lee, JI; Kim, JS; Han, IK |
| 2006-04 | Wavelength characteristics of chirped quantum dot superluminescent diodes for broad spectrum | Bae, HC; Park, HL; You, YC; Han, IK |
