Optical characterization of GaAs/AlAs short period superlattices

Authors
Woo, DHHan, IKChoi, WJLee, SKim, HJLee, JIKim, SHKang, KNChoi, SGKim, YDYoo, SDAspnes, DERhee, SJWoo, JC
Issue Date
1998-08
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v.43-4, pp.265 - 270
Abstract
We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photoluminescence and Raman scattering experiments, respectively. Spectroscopic ellipsometric (SE) measurements were also performed. We found a new structure at the lower E-2 peak, which is the best resolution of the E-2 structure in these SLs so far obtained by SE. (C) 1998 Elsevier Science B.V. All rights reserved.
Keywords
GAAS-ALAS; TRANSITIONS; ALXGA1-XAS; GAAS-ALAS; TRANSITIONS; ALXGA1-XAS; MBE
ISSN
0167-9317
URI
https://pubs.kist.re.kr/handle/201004/142949
DOI
10.1016/S0167-9317(98)00173-7
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KIST Article > Others
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