1993-01 | Improvement of electrical properties of LPE-Hg0.8Cd0.2Te using Cd0.94Zn0.06Te buffer layer. | 서상희; 곽노정; 최인훈 |
2003-11 | Improvement of HgCdTe qualities grown by MOVPE using MBE grown CdTe/Si as substrate | 김진상; 서상희; S. Sivananthan |
1998-12 | In-situ Doped Multilayer MOVPE HgCdTe Growth and Photodiode Fabrication | 송종형; 정관욱; 김진상; 서상희; 김인재; 김선웅; 박만장; 박승만; 김홍국; 김재묵 |
1990-01 | LPE growth of Hg0.80Cd0.20Te. | 서상희; 최종술; 우병일; 김재묵; 문성욱 |
1995-05 | LPE 법에 의한 HgCdTe 이종 다층막의 성장 및 광전압 적외선 감지 소자의 정특성 . | 서상희; 문성욱 |
1992-01 | Material characteristics of CdTe and Cd0.96Zn0.04Te single crystals grown by modified bridgman technique. | 서상희; 김진상; 김재묵 |
2001-04 | Micromachining and fabrication of thin films for MEMS-infrared detectors | 염상섭; 박흥우; 박윤권; 주병권; 오영제; 이종훈; 정문교; 서상희; 황근창 |
2001-11 | MOVPE Growth and Characteristic of HgCdTe for Uncooled SWIR Detector | 김진상; 서상희; 안세영; 김용식 |
2003-02 | MOVPE 법으로 성장한 HgCdTe 박막의 Cd/Te 몰분율에 따른 특성 | 서대원; 김창경; Ngoc-TuLanh; 김진상; 서상희 |
1998-12 | n situ Growth of p-HgCdTe/N-HgCdTe/CdTe/GaAs Epilayer and Fabrication of Two Color Infrared Detector | 박승만; 김흥국; 김재묵; 송종형; 서상희 |
1996-07 | Ohmic 층으로서 HgSe/GaAs의 성장 조건 및 HgSe/p-ZnSe/GaAs 구조의 전기적 특성 | 김제원; 최인훈; 김진상; 서상희 |
1998-01 | Passivation of HgCdTe by thermal evaporated CdZnTe | 김제원; 송종형; 최인훈; 김진상; 서상희 |
2001-11 | Performance of HgCdTe Photo-Diode Passivated with CdZnTe | 안세영; 김진상; 서상희; 김용식 |
2003-11 | RF 스퍼터링 법으로 HgCdTe 위에 형성된 Silicon Nitride 표면보호막의 특성 | 안세영; 이상훈; 서상희; 김진상; 정용철 |
1998-10 | Si micromachining for MEMS-IR sensor application | 박흥우; 주병권; 박윤권; 박정호; 김철주; 염상섭; 서상희; 오명환 |
1989-01 | Slider LPE growth of Hg0.3CdO.7Te. | 서상희; 김진상; 유한일 |
1994-01 | Structural properties of ZnSe on GaAs grown by atomic layer epitaxy. | 서상희; C. D. Lee; B. K. Kim; J. W. Kim; S. K. Chang |
1997-05 | Structural properties of ZnSe-related layers grown on off-oriented (001) GaAs substrates for blue-green light-emitting devices | 김진상; 송종형; 김제원; 정수진; 서상희 |
2001-11 | Studies on Formation of the Floating Membrane using SOI Wafer and Application to Fabrication of Thermopile Sensor | 이성준; 주병권; 이윤희; 서상희; 오명환; 김태윤; 김철주 |
1994-01 | Surface morphology and growth rate of Hgl-xCdxTe grown by MOVPE on (100)GaAs. | 서상희; 임성욱; 송종형; 박만장; 김홍국; 김재묵 |
1992-01 | The effect of dislocation density of CdTe(CdZnTe) substrated on the dislocation density and distribution of LPE grown Hg0.7Cd0.3Te. | 서상희; 임성욱; 김재묵; 송원준; 최인훈 |
1990-01 | The effect of growth temperature on the surface morphology and composition of LPE growing Hgl-xCdxTe. | 서상희; 임성욱; 최인훈 |
1994-01 | The effect of in doping on the electrical and optical properties of LPE grown Hg0.7Cd0.3Te. | 서상희; 문성욱; 최종술 |
1992-01 | The effect of lattice mismatch on the dislocation density and distribution in LPE-grown HgCdTe/CdTe(CdZnTe) hetero-junction. | 서상희; 임성욱; 곽노정; 최인훈; 김재묵; 문성욱 |
1995-09 | The effect of ZnTe buffer layer on the crystal quality and surface appearence of CdTe layer grown by MOCVD(100) GaAs substrate using cross-sectional and planview TEM observation. | 서상희; 박만장; 김긍호; 김봉진; 송종형 |
1998-01 | The growth of arsenic doped p-HgCdTe using metal organic vapour phase epitaxy | 송종형; 박만장; 김제원; 김진상; 서상희 |
2001-12 | The Interfacial Characteristics of Anodic Sulfides Films on HgCdTe | 김용식; 안세영; 전용우; 김선웅; 박만장; 김진상; 서상희 |
2003-01 | The use of an electron cyclotron resonance plasma to fabrication a photovoltaic HgCdTe diode for MWIR detection | 안세영; 이상훈; 서상희; 김진상 |
2017-10 | Use of Hydrazine for Pitting Corrosion Inhibition of Copper Sprinkler Tubes:Reaction of Hydrazine with Corrosion By-Products | 서상희; 김소희; 서영준 |
1995-09 | Variation of electrical properties along the depth of LPE HgCdTe. | 서상희; 문성욱 |