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Showing results 1 to 13 of 13

Issue Date	Title	Author(s)
2009-12	Analysis of current-voltage characteristics of Fe/MgO/GaAs junctions using self-consistent field modeling	Park, Y. J.; Hickey, M. C.; Van Veenhuizen, M. J.; Chang, J.; Heiman, D.; Moodera, J. S.
2007-01-30	Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy	Kim, J. H.; Park, Y. J.; Park, Y. M.; Song, J. D.; Lee, J. I.; Kim, T. W.
2009-08-15	Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs	Oh, Eunsoon; Lee, T. K.; Park, J. H.; Choi, J. H.; Park, Y. J.; Shin, K. H.; Kim, K. Y.
2006-07-24	Clarification of Mn-Zn interaction for InMnP : Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy	Shon, Yoon; Lee, Sejoon; Jeon, H. C.; Lee, S. -W.; Kim, D. Y.; Kang, T. W.; Kim, Eun Kyu; Yoon, Chong S.; Kim, C. K.; Park, Y. J.; Lee, Jeoung Ju
2006-08	Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure	Jung, I. Y.; Park, Y. M.; Park, Y. J.; Lee, J. I.; Kim, T. W.
2008-06-20	Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctions	Miao, G. X.; Park, Y. J.; Moodera, J. S.; Seibt, M.; Eilers, G.; Muenzenberg, M.
2011-03-23	Efficient spin transfer phenomena in Fe/MgO/GaAs structure	Park, Y. J.; Hickey, M. C.; Van Veenhuizen, M. J.; Chang, J.; Heiman, D.; Perry, C. H.; Moodera, J. S.
2006-12-29	Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn	Shon, Yoon; Jeon, H. C.; Lee, Sejoon; Lee, S. -W.; Kim, D. Y.; Kang, T. W.; Kim, Eun Kyu; Yoon, Chong S.; Kim, C. K.; Park, Y. J.; Kim, Yongmin; Baik, J. M.; Lee, J. L.
2006-05	Gate bias controlled NDR in an in-plane-gate quantum dot transistor	Son, S. H.; Choi, Y. S.; Hwang, S. W.; Lee, J. I.; Park, Y. J.; Yu, Y. S.; Ahn, D.
2008-04	Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors	Son, S. H.; Kang, M. G.; Hwang, S. W.; Lee, J. I.; Park, Y. J.; Yu, Y. S.; Ahn, D.
2008-06-06	Large spin diffusion length in an amorphous organic semiconductor	Shim, J. H.; Raman, K. V.; Park, Y. J.; Santos, T. S.; Miao, G. X.; Satpati, B.; Moodera, J. S.
2006-08-21	Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10 at. %)	Shon, Yoon; Lee, Sejoon; Jeon, H. C.; Park, Y. S.; Kim, D. Y.; Kang, T. W.; Kim, Jin Soak; Kim, Eun Kyu; Fu, D. J.; Fan, X. J.; Park, Y. J.; Baik, J. M.; Lee, J. L.
2004-05	Superparamagnetism of transition metal nanoparticles in conducting polymer film	Yoon, M.; Kim, Y.; Kim, Y. M.; Yoon, H.; Volkov, V.; Avilov, A.; Park, Y. J.; Park, I. -W.

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