| 2010-10 | A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 mu m surface emitting laser diodes | Cho, N. K.; Kim, K. W.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2006-08 | A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy | Kim, Jin Soak; Kim, Eun Kyu; Han, Il Ki; Song, Jin Dong; Lee, Jung Il; Lee, Sejoon; Shon, Yoon; Kim, D. Y. |
| 2018-09 | Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu2ZnSn(S,Se)(4) Thin Film Solar Cells | Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young |
| 2016-04 | All-electric spin transistor using perpendicular spins | Kim, Ji Hoon; Bae, Joohyung; Min, Byoung-Chul; Kim, Hyung-jun; Chang, Joonyeon; Koo, Hyun Cheol |
| 2023-02 | Amorphous TiO2 Passivating Contacts for Cu(In,Ga)(S,Se)(2) Ultrathin Solar Cells: Defect-State-Mediated Hole Conduction | Gi Soon Park; Lee, SeungJe; Kim, Da-Seul; Park, Sang Yeun; Koh, Jai Hyun; Won, Da Hye; Lee, Phillip; Do, Young Rag; Min, Byoung Koun |
| 1998-08 | An electron microscopy study on the formation mechanism of hillocks on the (100)CdTe/GaAs | Kim, YK; Lee, JY; Kim, HS; Song, JH; Suh, SH |
| 2013-11-29 | Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model | Hwang, S. Y.; Kim, T. J.; Byun, J. S.; Barange, N. S.; Diware, M. S.; Kim, Y. D.; Aspnes, D. E.; Yoon, J. J.; Song, J. D. |
| 1998-02-01 | Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells | Yuan, S; Kim, Y; Tan, HH; Jagadish, C; Burke, PT; Dao, LV; Gal, M; Chan, MCY; Li, EH; Zou, J; Cai, DQ; Cockayne, DJH; Cohen, RM |
| 1996-10 | Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-x as a symmetric double quantum wells: AlxGa1-xAs as a percolating barrier | Kim, DS; Ko, HS; Kim, YM; Rhee, SJ; Hong, SC; Yee, YH; Kim, WS; Woo, JC; Choi, HJ; Ihm, J; Woo, DH; Kang, KN |
| 2008-03 | Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina | Jung, Mi; Lee, Seok; Byun, Young Tae; Jhon, Young Min; Kim, Sun Ho; Woo, Deok-Ha; Mho, Sun-il |
| 2004-12 | Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A |
| 2002-10 | Characteristics of molecular beam epitaxy-grown GaFeAs | Park, YJ; Oh, HT; Park, CJ; Cho, HY; Shon, Y; Kim, EK; Moriya, R; Munekata, H |
| 2013-05-01 | Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence | Yang, Changjae; Lee, Sangsoo; Shin, Keun-Wook; Oh, Sewoung; Moon, Daeyoung; Kim, Sung-Dae; Kim, Young-Woon; Kim, Chang-Zoo; Park, Won-kyu; Choi, Won Jun; Park, Jinsub; Yoon, Euijoon |
| 1996-06 | Characterization of the oxidized indium thin films with thermal oxidation | Lee, MS; Choi, WC; Kim, EK; Kim, CK; Min, SK |
| 2017-02 | Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters | Liu, Jin; Davanco, Marcelo I.; Sapienza, Luca; Konthasinghe, Kumarasiri; De Miranda Cardoso, Jose Vinicius; Song, Jin Dong; Badolato, Antonio; Srinivasan, Kartik |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD | Son, CS; Cho, S; Choi, IH; Kim, SI; Kim, YT; Chung, SW |
| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 1995-03-15 | DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100) | LIE, DYC; SONG, JH; VANTOMME, A; EISEN, F; NICOLET, MA; THEODORE, ND; CARNS, TK; WANG, KL |
| 1995-05 | DEPENDENCE OF PROPAGATION LOSS ON ETCHING DEPTH IN AL0.3GA0.7AS/GAAS AL0.3GA0.7AS STRIP-LOADED TYPE WAVE-GUIDES | PARK, KH; BYUN, YT; KIM, Y; KIM, SH; CHOI, SS; CHUNG, Y |
| 2003-11 | Detection and volume estimation of semiconductor quantum dots from atomic force microscope images | Oh, S; Hyon, C; Sull, S; Hwang, S; Park, Y |
| 1995-10-15 | DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER | CHOI, WJ; LEE, S; KIM, Y; KIM, SK; LEE, JI; KANG, KN; PARK, N; PARK, HL; CHO, K |
| 2013-11-01 | Dielectric functions of In-1 (-) xAlxSb alloys for arbitrary compositions with parametric modeling | Diware, Mangesh S.; Kim, Tae Jung; Yoon, Jae Jin; Barange, Nilesh S.; Byun, Jun Seok; Park, Han Gyeol; Kim, Young Dong; Shin, Sang Hoon; Song, Jin Dong |
| 2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
| 2009-09 | Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots | Ryu, Sung-Pil; Cho, Nam-Ki; Lim, Ju-Young; Rim, A-Ram; Choi, Won-Jun; Song, Jin-Dong; Lee, Jung-Il; Lee, Yong-Tak |
| 2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
| 2009-09 | Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density | Ryu, Sung-Pil; Cho, Nam-Ki; Lim, Ju-Young; Lee, Hye-Jin; Choi, Won-Jun; Song, Jin-Dong; Lee, Jung-Il; Lee, Yong-Tak |
| 2007-07-15 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode | Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H. |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 2005-07-01 | Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) | Zhao, ZM; Hul'ko, O; Kim, HJ; Liu, J; Shi, B; Xie, YH |
