Browsing by Author 박용주

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Showing results 17 to 46 of 301

Issue DateTitleAuthor(s)
1989-08Behaviour of transition metal tungsten in bulk GaAs crystal박용주; 한철원; 심광보; 박승철; 민석기
2007-01Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy김지훈; 박용주; 박영민; 송진동; 이정일; 김태환
2004-07Carrier dynamics in InGaAs dots-in-a-well structure formed by atomic-layer epitaxy박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호
2004-09Carrier dynamics in the coupled structure of InGaAs quantum dots in a well박영민; Keon-Ho Yoo; 박용주; 김광무; 송진동; 이정일
1997-06Characteristic of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance박용주; 민석기; 김은규; I. W. Park; T. H. Yeom; H. Munekata; H. Kukimoto
1996-07Characteristics of a nitrogen gas-pulsed electron cyclotron resonance plasma박용주; 김은규; 민석기; K. Ozasa; P. O'Keeffe; Y. Aoyagi
2006-05Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer손윤; H.C. Jeon; Y.S. Park; Sejoon Lee; Y.H. Kwon; Seung Joo Lee; D.Y. Kim; H.S. Kim; T.W. Kang; 박용주; Chong S. Yoon; Chang Kyung Kim; E.K. Kim; Yongmin Kim; Y.D. Woo
2000-09Characteristics of GaN films grown on the stress-imposed Si(lll)고의관; 박용주; 김은규; 박찬수; 이석헌; 이정희; 조성호
1998-02Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-melt박용주; 손맹호; 김은규; 민석기
1998-11Characteristics of GaN micro-crystals synthesized by the direct reaction of NH3 with Ga-melt박용주; 손맹호; 김은규; 민석기
2002-10Characteristics of molecular beam epitaxy-grown GaFeAs박용주; H. T. Oh; C. J. Park; H. Y. Cho; Y. Shon; E. K. Kim; R. Morkya; H. Munekata
2001-11Characteristics of molecular beam epitaxy-grown GaFeAs박용주; H.T.Oh; E.K.Kim; C.J.Park; H.Y.Cho; Moria; H.Munekata
1995-03Characteristics of Ru and RuO₂ schottky contacts on hydrogenated N-type GaAs.박용주; 김은규; 이종근; 최원철; 민석기
1998-01Characterization of the nitrided GaAs thin layers after rapid thermal annealing by using raman scattering.고의관; 박용주; 김은규; 조성호
2006-07Clarification of Mn-Zn interaction for InMnP:Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy손윤; 이세준; 전희창; 이승웅; D.Y. Kim; 강태원; 김은규; Chong S. Yoon; C.K. Kim; 박용주; Jeoung Ju Lee
1997-01Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property박용주; T. H. Yeom; I. W. Park; S. H. Choh; 민석기
2000-11Control of semiconductor nano-structures for quantum devices김은규; 김효진; 김광무; 박영민; 박용주
2004-12Coupling effect between InAs Quantum dots and electric field-induced quantum dot김재호; 정재헌; 곽계달; 김태환; 박용주
1995-02Creation of high-peak plasma-pulses and control of surface reaction in short-pulsed chemical beam epitaxy.박용주; K. Ozasa; Y. Aoyagi
2001-06Defect generation in multi-stacked InAs quantum dot/GaAs structures노정현; 박용주; 김광무; 박영민; 김은규; 심광보
2001-05Defect states in diluted magnetic semiconductors : Ga(Mn,Fe)As오형택; 박찬진; 조훈영; 강태원; 박용주; R. Moriya; H. Munekata
2000-07Dependence of buffer layer on the distribution of InAs quantum dots김효진; 민병돈; 박용주; 현찬경; 박세기; 김은규
2001-04Dependence of buffer layer on the distribution of InAs quantum dots김효진; 박용주; 민병돈; 현찬경; 박세기; 김은규; 김태환
2006-08Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure정인영; 박영민; 박용주; 이정일; 김태환
2003-11Detection and volume estimation of semiconductor quantum dots from atomic force microscope images오상욱; 현찬경; 설상훈; 황성우; 박용주
2003-06Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 한해욱
2002-04Development of compound semiconductors박용주
2005-08Diluted magnetic semiconductor of p-type InMnP:Zn epilayer손윤; H.C. Jeon; Y.S. Park; 이승주; D.Y. Kim; H.S. Kim; T.W. Kang; 박용주; Chong S. Yoon; 김창경; E.K. Kim; 김용민; Y.D. Woo
2002-05Directional pore arrays on anodic aluminum oxide template조운조; 이수진; 박재관; 박용주; 김은규
2008-06Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctionsG.X.Miao; 박용주; J.S.Moodera; M.Seibt; G.Eilers; M. Munzenberg