| 2007-01 | Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy | 김지훈; 박용주; 박영민; 송진동; 이정일; 김태환 |
| 2004-07 | Carrier dynamics in InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | 박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호 |
| 2004-09 | Carrier dynamics in the coupled structure of InGaAs quantum dots in a well | 박영민; Keon-Ho Yoo; 박용주; 김광무; 송진동; 이정일 |
| 1997-06 | Characteristic of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance | 박용주; 민석기; 김은규; I. W. Park; T. H. Yeom; H. Munekata; H. Kukimoto |
| 1996-07 | Characteristics of a nitrogen gas-pulsed electron cyclotron resonance plasma | 박용주; 김은규; 민석기; K. Ozasa; P. O'Keeffe; Y. Aoyagi |
| 2006-05 | Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer | 손윤; H.C. Jeon; Y.S. Park; Sejoon Lee; Y.H. Kwon; Seung Joo Lee; D.Y. Kim; H.S. Kim; T.W. Kang; 박용주; Chong S. Yoon; Chang Kyung Kim; E.K. Kim; Yongmin Kim; Y.D. Woo |
| 2000-09 | Characteristics of GaN films grown on the stress-imposed Si(lll) | 고의관; 박용주; 김은규; 박찬수; 이석헌; 이정희; 조성호 |
| 1998-02 | Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-melt | 박용주; 손맹호; 김은규; 민석기 |
| 1998-11 | Characteristics of GaN micro-crystals synthesized by the direct reaction of NH3 with Ga-melt | 박용주; 손맹호; 김은규; 민석기 |
| 2002-10 | Characteristics of molecular beam epitaxy-grown GaFeAs | 박용주; H. T. Oh; C. J. Park; H. Y. Cho; Y. Shon; E. K. Kim; R. Morkya; H. Munekata |
| 2001-11 | Characteristics of molecular beam epitaxy-grown GaFeAs | 박용주; H.T.Oh; E.K.Kim; C.J.Park; H.Y.Cho; Moria; H.Munekata |
| 1995-03 | Characteristics of Ru and RuO₂ schottky contacts on hydrogenated N-type GaAs. | 박용주; 김은규; 이종근; 최원철; 민석기 |
| 1998-01 | Characterization of the nitrided GaAs thin layers after rapid thermal annealing by using raman scattering. | 고의관; 박용주; 김은규; 조성호 |
| 2006-07 | Clarification of Mn-Zn interaction for InMnP:Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy | 손윤; 이세준; 전희창; 이승웅; D.Y. Kim; 강태원; 김은규; Chong S. Yoon; C.K. Kim; 박용주; Jeoung Ju Lee |
| 1997-01 | Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property | 박용주; T. H. Yeom; I. W. Park; S. H. Choh; 민석기 |
| 2000-11 | Control of semiconductor nano-structures for quantum devices | 김은규; 김효진; 김광무; 박영민; 박용주 |
| 2004-12 | Coupling effect between InAs Quantum dots and electric field-induced quantum dot | 김재호; 정재헌; 곽계달; 김태환; 박용주 |
| 1995-02 | Creation of high-peak plasma-pulses and control of surface reaction in short-pulsed chemical beam epitaxy. | 박용주; K. Ozasa; Y. Aoyagi |
| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | 노정현; 박용주; 김광무; 박영민; 김은규; 심광보 |
| 2001-05 | Defect states in diluted magnetic semiconductors : Ga(Mn,Fe)As | 오형택; 박찬진; 조훈영; 강태원; 박용주; R. Moriya; H. Munekata |
| 2000-07 | Dependence of buffer layer on the distribution of InAs quantum dots | 김효진; 민병돈; 박용주; 현찬경; 박세기; 김은규 |
| 2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | 김효진; 박용주; 민병돈; 현찬경; 박세기; 김은규; 김태환 |
| 2006-08 | Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure | 정인영; 박영민; 박용주; 이정일; 김태환 |
| 2003-11 | Detection and volume estimation of semiconductor quantum dots from atomic force microscope images | 오상욱; 현찬경; 설상훈; 황성우; 박용주 |
| 2003-06 | Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs | 황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 한해욱 |
| 2002-04 | Development of compound semiconductors | 박용주 |
| 2005-08 | Diluted magnetic semiconductor of p-type InMnP:Zn epilayer | 손윤; H.C. Jeon; Y.S. Park; 이승주; D.Y. Kim; H.S. Kim; T.W. Kang; 박용주; Chong S. Yoon; 김창경; E.K. Kim; 김용민; Y.D. Woo |
| 2002-05 | Directional pore arrays on anodic aluminum oxide template | 조운조; 이수진; 박재관; 박용주; 김은규 |
| 2008-06 | Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctions | G.X.Miao; 박용주; J.S.Moodera; M.Seibt; G.Eilers; M. Munzenberg |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | 송진동; 박용주; 한일기; 최원준; 조운조; 이정일; 조용훈; 이정용 |
