| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | 송진동; 박용주; 한일기; 최원준; 조운조; 이정일; 조용훈; 이정용 |
| 2004-05 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | 송진동; 박용주; 한일기; 최원준; 이정일 |
| 2003-10 | Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication | 송진동; 박영민; 임재구; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일 |
| 2005-03 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | 임재구; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일; T.W. Kim; H S Kim; C G Park |
| 2001-02 | Effect of Si doping on InAs/GaAs quantum dots | 조광식; 윤석호; 황희돈; 윤의준; 박영민; 박용주; 김은규; 임영수; 이정용 |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | 박영민; 박용주; 김광무; 노정현; 현찬경; 김은규 |
| 2000-11 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | 박세기; 박용주; 박영민; 김효진; 김은규; 이천 |
| 2001-12 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | S.K.Park; 박용주; Y.M.Park; H.J.Kim; E.K.Kim; C.Lee |
| 1995-01 | Effects of an axial magnetic field on the growth interfaces in vertical gradient freeze GaAs crystal growth. | 박용주; 민석기; 김은규; 손맹호 |
| 2003-08 | Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots | 임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일 |
| 1985-01 | Effects of domain and electric filed on 14N NQR in NaNO2. | 박용주; S. H. Choh; H. K. Kim |
| 2001-11 | Effects of doping methods on characteristics of InAs quantum dots | Young Min Park; 박용주; Kwang Moo Kim; JaeCheol Shin; 김은규 |
| 2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Young Min Park; 박용주; Kwang Moo Kim; Jae Cheol Shin; Eun Kyu Kim; Maeng Ho Son; Sung Woo Hwang; Keon-Ho Yoo |
| 2001-08 | Effects of GaN buffer layer thickness on characteristics of GaN epilayer | 조용석; 고의관; 박용주; 김은규; 황성민; 임시종; 변동진 |
| 2003-12 | Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy | 송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경 |
| 1996-01 | Effects of hydrogen plasma on the formation of self-organized InAs-quantum dot structure. | 박용주; 김은규; 민석기; K. Ozasa; Y. Aoyagi |
| 2002-03 | Effects of N+-implanted sapphire(0001) substrate on GaN epilayer | 조용석; 고의관; 박용주; 고동완; 김은규; 문영부; 임시종; 김긍호; Byun, Dongjin |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | J.S. Kim; 김은규; K. Park; E. Yoon; 한일기; 박용주 |
| 2004-11 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | 박영민; 박용주; 김광무; 이정일; 유건호 |
| 2000-01 | Effects of Si-molecular beam on the formation of InAs quantum dots | 박영민; 박용주; 김광무; 노정현; 현찬경; 김은규; 유근호 |
| 2009-04 | Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots | Kim, H. S.; Suh, J. H.; Park, C. G.; Lee, S. J.; Noh, S. K.; 송진동; 박용주; 최원준; 이정일 |
| 2004-08 | Effects of V/III flux ratio on Curie temperature of GaMnAs layer | 고동완; 박진범; 김광무; 박용주; 한일기; 이정일; Y.M. Kim; I.W. Park |
| 1999-11 | Efficiency enhancement of quantum-structure solar cells utilizing InxGa1-xAs/GaAs multiple quantum wells | 김효진; 박영균; 박용주; 김성일; 김은규; 김태환 |
| 2011-03 | Efficient spin transfer phenomena in Fe/MgO/GaAs structure | 박용주; M.Hickey; M.Veenhuizen; 장준연; D.Heiman; C.Perry; J.Moodera |
| 2003-02 | Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique | 박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호 |
| 2004-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | 박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호 |
| 1999-09 | Electrical characteristics of the native oxide formed by using anodic oxidation with thermal treatment | 이주식; 박용주; 손맹호; 김은규; 염태호 |
| 2004-07 | Electrical Characterization of InAs/GaAs Quantum-Dot Infrared Photodiodes | 박희경; 김은규; 이창훈; 송진동; 최원준; 박용주; 이정일 |
| 2004-06 | Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy | E. K. Kim; J. S. Kim; H. Hwang; K. Park; E. Yoon; J. H. Kim; I. W. Park; 박용주 |
| 2004-07 | Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers | J.S. Kim; E.K. Kim; H. Hwang; K. Park; E. Yoon; I.W. Park; 박용주 |
