| 2002-09 | Fabrication and characterization of a single electron transistor using n+ GaAs | S.H. Son; B.H. Choi; K.H. Cho; Y.M. Park; 박용주; S.W. Hwang; D. Ahn |
| 2004-07 | Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices | 손승훈; K. H. Cho; S. W. Hwang; 김광무; 박용주; Y. S. Yu; D. Ahn |
| 1997-12 | Fabrication of quantum structures by using patterned gallium oxide deposited GaAs substrates | 박용주; 민석기; 김은규; 한철구; 김광무; 장영준; 오치성; 박정호 |
| 2000-11 | Fabrication of wirelike In0.5Ga0.5As quantum dots on 2˚-off GaAs (100) substrates | 김효진; 박용주; 박영민; 박세기; 김은규; 김태환 |
| 2001-05 | Fabrication of wirelike InAs quantum dots on 2 ˚ -off GaAs (100) substrates by changing the thickness of the InAs layer | 김효진; 박용주; 박영민; 김은규 |
| 2000-09 | Fabrications of wire-like InAs quantum dots on 2o-off GaAs (100) substrates by control of the InAs layer thickness | 김효진; 박용주; 박영민; 김은규; 김태환 |
| 2007-03 | Fabry-Perot Interference Characteristics of the Photoluminescence in Nanoclustered SiNx:H Thick Films | Tae Gyoung Lee; Won Nam Kang; 박용주; Eun Kyu Kim |
| 2004-01 | Ferromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions | Yoon Shon; Young Hae Kwon; Y. S. Park; Sh. U. Yuldashev; Seung Joo Lee; C. S. Park; K. J. Chung; S. J. Yoon; H. J. Kim; W. C. Lee; D. J. Fu; T. W. Kang; X. J. Fan; 박용주; 오형택 |
| 2004-09 | Formation mechanism of self-assembled quantum dots-in-a-well structure | 박용주; 박영민; 송진동; 이정일 |
| 1996-06 | Formation of a thin nitrided GaAs layer. | 박용주; 김은규; 민석기; 김성일; 한일기; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
| 1998-04 | Formation of GaN micro-crystals by the direct reaction of NH3 with a Ga-Melt | 박용주; 손맹호; 김은규; 민석기 |
| 2000-09 | Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer | 황성민; 최인훈; 박용주; 현찬경; 김은규; 민석기 |
| 2002-03 | Ga ₂ O ₃의 질화기구연구 | 오청식; 박용주; 김은규; 염태호; 유영문 |
| 1989-05 | GaAs single crystal growth by the monitoring(DM) crystal grower. | 박용주; 박승철; 한철원; 민석기; 심광보 |
| 1991-05 | GaAs single crystal growth by the VGF technique. | 박용주; 박승철; 한철원; 민석기; 심광보 |
| 1997-09 | GaAs 표면의 질화 및 결함생성에 관한 연구 | 박용주; 민석기; 김은규 |
| 2002-06 | GaN 결정 내의 결함 연구 | 박일우; 조성호; 김종현; 이정훈; 전미선; 이연숙; 박성수; 박용주; 김영미; 유종훈; 민석기 |
| 2006-05 | Gate bias controlled NDR in an in-plane-gate quantum dot transistor | S.H. Son; Y.S. Choi; S.W. Hwang; 이정일; 박용주; Y.S. Yu; D. Ahn |
| 1990-01 | Growth and characterization of GaAs : In by a new horizontal zone melt technique. | 박용주; 민석기; 한철원; 심광보; 박승철; 김창범 |
| 1989-04 | Growth and characterization of low-dislotation GaAs single crystal by the DM furnace | 박용주; 민석기; 김은규; 김용; 한철원; 심광보; 박승철 |
| 1994-01 | Growth and characterization of semi-insulating GaAs co-doped with Cr and In by vertical gradient freeze technique. | 박용주; 민석기; 심기대; 박만장 |
| 1994-06 | Growth and characterization of VGF GaAs single crystal under the application of axial magnetic field. | 박용주; 민석기; 윤경식 |
| 2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | 황성민; 박용주; 나종범; 김은규; 최인훈 |
| 1995-01 | Growth behavior on V-grooved high miller index GaAs substrates by metalorganic chemical vapor deposition. | 박용주; 김무성; 김용; 이민석; 김성일; 민석기 |
| 1994-01 | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | 박용주; 김무성; 김용; 이민석; 김성일; 민석기 |
| 2000-08 | Growth characteristics for the polycrystalline GaN grains | 박종관; 박용주; 김은규; 노정현; 심광보 |
| 2004-03 | Growth characteristics of self-assembled InAs/GaAs quantum dots | 김형석; 서주형; 박찬경; 이상준; 노삼규; 송진동; 박용주; 이정일 |
| 1991-01 | Growth of GaAs crystal by an improved VGF apparatus. | 한철원; 심광보; 박용주; 박승철; 민석기 |
| 2004-09 | High power laser diodes/superluminescent diodes | 허두창; 한일기; 송진동; 박용주; 최원준; 조운조; 이정일 |
| 2003-08 | High-density quantum nanostructure for single mode distributed feedback semiconductor lasers by one-step growth | 손창식; 백종협; 김성일; 박용주; 김용태; 최훈상; 최인훈 |
