Browsing by Author 박용주

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Showing results 93 to 122 of 301

Issue DateTitleAuthor(s)
2002-09Fabrication and characterization of a single electron transistor using n+ GaAsS.H. Son; B.H. Choi; K.H. Cho; Y.M. Park; 박용주; S.W. Hwang; D. Ahn
2004-07Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices손승훈; K. H. Cho; S. W. Hwang; 김광무; 박용주; Y. S. Yu; D. Ahn
1997-12Fabrication of quantum structures by using patterned gallium oxide deposited GaAs substrates박용주; 민석기; 김은규; 한철구; 김광무; 장영준; 오치성; 박정호
2000-11Fabrication of wirelike In0.5Ga0.5As quantum dots on 2˚-off GaAs (100) substrates김효진; 박용주; 박영민; 박세기; 김은규; 김태환
2001-05Fabrication of wirelike InAs quantum dots on 2 ˚ -off GaAs (100) substrates by changing the thickness of the InAs layer김효진; 박용주; 박영민; 김은규
2000-09Fabrications of wire-like InAs quantum dots on 2o-off GaAs (100) substrates by control of the InAs layer thickness김효진; 박용주; 박영민; 김은규; 김태환
2007-03Fabry-Perot Interference Characteristics of the Photoluminescence in Nanoclustered SiNx:H Thick FilmsTae Gyoung Lee; Won Nam Kang; 박용주; Eun Kyu Kim
2004-01Ferromagnetic behavior of p-type GaN epilayer implanted with Fe+ ionsYoon Shon; Young Hae Kwon; Y. S. Park; Sh. U. Yuldashev; Seung Joo Lee; C. S. Park; K. J. Chung; S. J. Yoon; H. J. Kim; W. C. Lee; D. J. Fu; T. W. Kang; X. J. Fan; 박용주; 오형택
2004-09Formation mechanism of self-assembled quantum dots-in-a-well structure박용주; 박영민; 송진동; 이정일
1996-06Formation of a thin nitrided GaAs layer.박용주; 김은규; 민석기; 김성일; 한일기; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto
1998-04Formation of GaN micro-crystals by the direct reaction of NH3 with a Ga-Melt박용주; 손맹호; 김은규; 민석기
2000-09Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer황성민; 최인훈; 박용주; 현찬경; 김은규; 민석기
2002-03Ga ₂ O ₃의 질화기구연구오청식; 박용주; 김은규; 염태호; 유영문
1989-05GaAs single crystal growth by the monitoring(DM) crystal grower.박용주; 박승철; 한철원; 민석기; 심광보
1991-05GaAs single crystal growth by the VGF technique.박용주; 박승철; 한철원; 민석기; 심광보
1997-09GaAs 표면의 질화 및 결함생성에 관한 연구박용주; 민석기; 김은규
2002-06GaN 결정 내의 결함 연구박일우; 조성호; 김종현; 이정훈; 전미선; 이연숙; 박성수; 박용주; 김영미; 유종훈; 민석기
2006-05Gate bias controlled NDR in an in-plane-gate quantum dot transistorS.H. Son; Y.S. Choi; S.W. Hwang; 이정일; 박용주; Y.S. Yu; D. Ahn
1990-01Growth and characterization of GaAs : In by a new horizontal zone melt technique.박용주; 민석기; 한철원; 심광보; 박승철; 김창범
1989-04Growth and characterization of low-dislotation GaAs single crystal by the DM furnace박용주; 민석기; 김은규; 김용; 한철원; 심광보; 박승철
1994-01Growth and characterization of semi-insulating GaAs co-doped with Cr and In by vertical gradient freeze technique.박용주; 민석기; 심기대; 박만장
1994-06Growth and characterization of VGF GaAs single crystal under the application of axial magnetic field.박용주; 민석기; 윤경식
2000-11Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate황성민; 박용주; 나종범; 김은규; 최인훈
1995-01Growth behavior on V-grooved high miller index GaAs substrates by metalorganic chemical vapor deposition.박용주; 김무성; 김용; 이민석; 김성일; 민석기
1994-01Growth behavior on V-grooved high miller index GaAs substrates by MOCVD.박용주; 김무성; 김용; 이민석; 김성일; 민석기
2000-08Growth characteristics for the polycrystalline GaN grains박종관; 박용주; 김은규; 노정현; 심광보
2004-03Growth characteristics of self-assembled InAs/GaAs quantum dots김형석; 서주형; 박찬경; 이상준; 노삼규; 송진동; 박용주; 이정일
1991-01Growth of GaAs crystal by an improved VGF apparatus.한철원; 심광보; 박용주; 박승철; 민석기
2004-09High power laser diodes/superluminescent diodes허두창; 한일기; 송진동; 박용주; 최원준; 조운조; 이정일
2003-08High-density quantum nanostructure for single mode distributed feedback semiconductor lasers by one-step growth손창식; 백종협; 김성일; 박용주; 김용태; 최훈상; 최인훈