Browsing by Author 박용주

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Showing results 105 to 134 of 301

Issue DateTitleAuthor(s)
2002-03Ga ₂ O ₃의 질화기구연구오청식; 박용주; 김은규; 염태호; 유영문
1989-05GaAs single crystal growth by the monitoring(DM) crystal grower.박용주; 박승철; 한철원; 민석기; 심광보
1991-05GaAs single crystal growth by the VGF technique.박용주; 박승철; 한철원; 민석기; 심광보
1997-09GaAs 표면의 질화 및 결함생성에 관한 연구박용주; 민석기; 김은규
2002-06GaN 결정 내의 결함 연구박일우; 조성호; 김종현; 이정훈; 전미선; 이연숙; 박성수; 박용주; 김영미; 유종훈; 민석기
2006-05Gate bias controlled NDR in an in-plane-gate quantum dot transistorS.H. Son; Y.S. Choi; S.W. Hwang; 이정일; 박용주; Y.S. Yu; D. Ahn
1990-01Growth and characterization of GaAs : In by a new horizontal zone melt technique.박용주; 민석기; 한철원; 심광보; 박승철; 김창범
1989-04Growth and characterization of low-dislotation GaAs single crystal by the DM furnace박용주; 민석기; 김은규; 김용; 한철원; 심광보; 박승철
1994-01Growth and characterization of semi-insulating GaAs co-doped with Cr and In by vertical gradient freeze technique.박용주; 민석기; 심기대; 박만장
1994-06Growth and characterization of VGF GaAs single crystal under the application of axial magnetic field.박용주; 민석기; 윤경식
2000-11Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate황성민; 박용주; 나종범; 김은규; 최인훈
1995-01Growth behavior on V-grooved high miller index GaAs substrates by metalorganic chemical vapor deposition.박용주; 김무성; 김용; 이민석; 김성일; 민석기
1994-01Growth behavior on V-grooved high miller index GaAs substrates by MOCVD.박용주; 김무성; 김용; 이민석; 김성일; 민석기
2000-08Growth characteristics for the polycrystalline GaN grains박종관; 박용주; 김은규; 노정현; 심광보
2004-03Growth characteristics of self-assembled InAs/GaAs quantum dots김형석; 서주형; 박찬경; 이상준; 노삼규; 송진동; 박용주; 이정일
1991-01Growth of GaAs crystal by an improved VGF apparatus.한철원; 심광보; 박용주; 박승철; 민석기
2004-09High power laser diodes/superluminescent diodes허두창; 한일기; 송진동; 박용주; 최원준; 조운조; 이정일
2003-08High-density quantum nanostructure for single mode distributed feedback semiconductor lasers by one-step growth손창식; 백종협; 김성일; 박용주; 김용태; 최훈상; 최인훈
2008-04Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors손승훈; M. G. Kang; S. W. Hwang; 이정일; 박용주; Y. S. Yu; 안도열
2002-08H₂/N₂ mixing plasma pretreatment of sapphire for GaN depositionJ.K.Kim; 박용주; D.Byun; E.K.Koh
2002-06Implantation of N ions on sapphire substrate for improvement of GaN epilayer조용석; 진정근; 박용주; 조성찬; 고의관; 김은규; 김긍호; 변동진; 민석기
2001-11Implantation of N-ion on sapphire substrate for GaN epilayer박용주; Yong Suk Cho; Eui Kwan Koh; 김은규; Gyeungho Kim; Dongjin Byun; Suk-Ki Min
2001-11Improved crystalline quality of GaN by substrate ion beam pre-treatmentDongjin Byun; Yong Suk Cho; Jaekyun Kim; 박용주; 김은규; 김긍호; Eui-kwan Koh; Suk-Ki Min
2002-06Improved crystalline quality of GaN by substrate ion beam pretreatment조용석; 진정근; 고의관; 박용주; 김은규; 김긍호; 민석기; 변동진
1991-01Improved growth techniques for GaAs single crystal.박용주; 박승철; 한철원; 민석기; 심광보
2002-09Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films.J.H. Lee; 최원준; 박용주; 한일기; 조운조; 이정일; E.K. Kim
2003-06Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO₂ and SiNx capping films이정호; 최원준; 박용주; 한일기; 이정일; 조운조; 김은규
2005-03In situ HREM study on the thermal stability of atomic layer epitaxy grown InAs/GaAs quantum dots김형석; J. H. Suh; 박찬경; 이상준; 노삼규; 송진동; 박용주; 최원준; 이정일
1994-11Influence of a magnetic field on the temperature distribution in a Ga-melt.박용주; 민석기; 한승호; 윤종규
2004-10Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 이정일; H.S. Kim; 박찬경

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