| 2002-03 | Ga ₂ O ₃의 질화기구연구 | 오청식; 박용주; 김은규; 염태호; 유영문 |
| 1989-05 | GaAs single crystal growth by the monitoring(DM) crystal grower. | 박용주; 박승철; 한철원; 민석기; 심광보 |
| 1991-05 | GaAs single crystal growth by the VGF technique. | 박용주; 박승철; 한철원; 민석기; 심광보 |
| 1997-09 | GaAs 표면의 질화 및 결함생성에 관한 연구 | 박용주; 민석기; 김은규 |
| 2002-06 | GaN 결정 내의 결함 연구 | 박일우; 조성호; 김종현; 이정훈; 전미선; 이연숙; 박성수; 박용주; 김영미; 유종훈; 민석기 |
| 2006-05 | Gate bias controlled NDR in an in-plane-gate quantum dot transistor | S.H. Son; Y.S. Choi; S.W. Hwang; 이정일; 박용주; Y.S. Yu; D. Ahn |
| 1990-01 | Growth and characterization of GaAs : In by a new horizontal zone melt technique. | 박용주; 민석기; 한철원; 심광보; 박승철; 김창범 |
| 1989-04 | Growth and characterization of low-dislotation GaAs single crystal by the DM furnace | 박용주; 민석기; 김은규; 김용; 한철원; 심광보; 박승철 |
| 1994-01 | Growth and characterization of semi-insulating GaAs co-doped with Cr and In by vertical gradient freeze technique. | 박용주; 민석기; 심기대; 박만장 |
| 1994-06 | Growth and characterization of VGF GaAs single crystal under the application of axial magnetic field. | 박용주; 민석기; 윤경식 |
| 2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | 황성민; 박용주; 나종범; 김은규; 최인훈 |
| 1995-01 | Growth behavior on V-grooved high miller index GaAs substrates by metalorganic chemical vapor deposition. | 박용주; 김무성; 김용; 이민석; 김성일; 민석기 |
| 1994-01 | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | 박용주; 김무성; 김용; 이민석; 김성일; 민석기 |
| 2000-08 | Growth characteristics for the polycrystalline GaN grains | 박종관; 박용주; 김은규; 노정현; 심광보 |
| 2004-03 | Growth characteristics of self-assembled InAs/GaAs quantum dots | 김형석; 서주형; 박찬경; 이상준; 노삼규; 송진동; 박용주; 이정일 |
| 1991-01 | Growth of GaAs crystal by an improved VGF apparatus. | 한철원; 심광보; 박용주; 박승철; 민석기 |
| 2004-09 | High power laser diodes/superluminescent diodes | 허두창; 한일기; 송진동; 박용주; 최원준; 조운조; 이정일 |
| 2003-08 | High-density quantum nanostructure for single mode distributed feedback semiconductor lasers by one-step growth | 손창식; 백종협; 김성일; 박용주; 김용태; 최훈상; 최인훈 |
| 2008-04 | Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors | 손승훈; M. G. Kang; S. W. Hwang; 이정일; 박용주; Y. S. Yu; 안도열 |
| 2002-08 | H₂/N₂ mixing plasma pretreatment of sapphire for GaN deposition | J.K.Kim; 박용주; D.Byun; E.K.Koh |
| 2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | 조용석; 진정근; 박용주; 조성찬; 고의관; 김은규; 김긍호; 변동진; 민석기 |
| 2001-11 | Implantation of N-ion on sapphire substrate for GaN epilayer | 박용주; Yong Suk Cho; Eui Kwan Koh; 김은규; Gyeungho Kim; Dongjin Byun; Suk-Ki Min |
| 2001-11 | Improved crystalline quality of GaN by substrate ion beam pre-treatment | Dongjin Byun; Yong Suk Cho; Jaekyun Kim; 박용주; 김은규; 김긍호; Eui-kwan Koh; Suk-Ki Min |
| 2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | 조용석; 진정근; 고의관; 박용주; 김은규; 김긍호; 민석기; 변동진 |
| 1991-01 | Improved growth techniques for GaAs single crystal. | 박용주; 박승철; 한철원; 민석기; 심광보 |
| 2002-09 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films. | J.H. Lee; 최원준; 박용주; 한일기; 조운조; 이정일; E.K. Kim |
| 2003-06 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO₂ and SiNx capping films | 이정호; 최원준; 박용주; 한일기; 이정일; 조운조; 김은규 |
| 2005-03 | In situ HREM study on the thermal stability of atomic layer epitaxy grown InAs/GaAs quantum dots | 김형석; J. H. Suh; 박찬경; 이상준; 노삼규; 송진동; 박용주; 최원준; 이정일 |
| 1994-11 | Influence of a magnetic field on the temperature distribution in a Ga-melt. | 박용주; 민석기; 한승호; 윤종규 |
| 2004-10 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | 송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 이정일; H.S. Kim; 박찬경 |
