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Showing results 24 to 53 of 385

Issue DateTitleAuthor(s)
2005-02Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrierJung, S.I.; Yoon, J.J.; Park, H.J.; Park, Y.M.; 전민현; 임재영; 이창명; 조은태; 이주인; Kim, J.S.; Son, J.S.; Kim, J.S.; Lee, D.Y.; 한일기
2014-11Blue Inorganic Light Emitting Diode on Flexible Polyimide Substrate Using Laser Lift-Off Process닐리쉬; 김영동; 고형덕; 박준서; 박병남; 고두현; 한일기
2014-09Broadband light absorption using a multilayered gap surface plasmon resonator고형덕; 고두현; Younghak Cho; 한일기
2010-08Calculation of full digital-alloyed 1.3 μm MQWs and their optical, structural and electrical propertiesK H LEE; 송진동; 이정훈; 허두창; 한일기; Y T LEE
2020-10Carrier?phonon interaction of GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy한일기; 송진동; 여인아; 김종수
1998-05CBE법으로 성장시킨 InGaAs/InGaAsP MQW을 활성층으로 하는 DFB 레이저 다이오드의 동작특성박경현; 우덕하; 한일기; 이석; 김선호; 최상삼
2017-02CH3NH3PbI3 crystal orientation and photovoltaic performance of planar heterojunction perovskite solar cells한일기; 박준서; 배승환; 신태주; 조원호
1999-11Characteristics of 1.55 ㎛ diffraction-limited high-power LD with different p-doping profiles한일기; 조시형; 우덕하; 김선호; 이정일; F.G. Johnson; M. Dagenais
2004-12Characteristics of 1/f Noise in Au/GaAs Schottky Diode Embedded with Self-Assembled InAs Quantum Dots송진동; 최원준; 한일기; 이정일; 김정훈; 송종인; Alain Chovet
2009-04Characteristics of chirped quantum dot superluminescent diodes배형철; 박홍이; 유영채; 한일기; 김종수
2009-12Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures유영채; 한일기; 이정일; 이주인; 김은규
1997-11Characteristics of semiconductor optical amplifier coated by double-layer antireflection이석; 조용상; 우덕하; 김회종; 한일기; 박경현; 김선호; 강광남; Jungkeun Lee; Takeshi Kamiya
2003-08Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots허두창; 송진동; 최원준; 이정일; 정지채; 한일기
1992-01Charge trapping instabilities in SiO2/InP MIS structures.강광남; 이정일; 최병두; 김충환; 임한조; 한일기
1997-05Chirped DBR grating 구조가 파장 가변 다전극 DBR 레이저 다이오드의 특성에 미치는 영향 .조성호; 김회종; 한일기; 최원준; 이석; 우덕하; 김선호; 강광남; 최상삼; 윤태훈
2020-07Comparative chemico-physical analyses of strain-free GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy한일기; 송진동; 이규태; 여인아; 김도균; 김종수; 박철홍
2007-08Comparison of optical gain and α-factor in laser diodes having different quantum dot structures김경찬; 유영채; J. H. Jung; 한일기; 이정일; D. H. Kim; 김태근
1987-01Composition determinatin of THM grown Hg1-xZnxTe single crystal by dEg/dT전형욱; 김근묵; 한석룡; 한일기; 박홍이; 정중현
1993-01Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitride.강광남; 이정일; 한일기; C. H. Kim; B. Choe; H. L. Park; H. Lim
2002-05Correlation between threshold voltage shift and gate current change in MODFET's under optical illumination김회종; 김동명; 한일기; 최원준; 이정일
2003-07CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers허두창; 송진동; 한일기; 이정일; 정지채; 김종민; 이용탁
2000-03Dependence of the light-current characteristics of 1.55-㎛ broad-area lasers on different p-doping profiles한일기; S. H. Cho; P. J. S. Heim; 우덕하; 김선호; J. H. Song; F. G. Johnson; M. Dagenais
1993-01Deposition temperature dependence of electrical instability in InP MIS provided by PECVD silicon nitride.강광남; 이정일; 한일기; M. B. Lee; Y. J. Lee; H. Lim
2013-01Design and Fabrication of 1.35-μm Laser Diodes With Full Digital-Alloy InGaAlAs MQW허두창; 송진동; 한일기; 최원준; 이용탁
2003-06Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 한해욱
2003-08Development of quantum dot VCSEL array modules최원준; 한일기
1996-01Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.강광남; 김회종; W. J. Choi; 이석; D. Woo; 한일기; S. K. Kim; S. H. Kim; 이정일
2007-09Dislocation related defect states in GaN irradiated with 1 MeV electron-beam이동욱; 하임경; 김진석; 김은규; 고의관; 한일기
2008-04Dislocation related defect states in GaN irradiated with 1 MeV electron-beam이동욱; 하임경; 김진석; 김은규; 고의관; 한일기
2013-09Down-conversion effect on GaAs single junction solar cell using CdSe quantum dots한일기; 송진동; 박준서; 고형덕; 김지훈; 김은겸