| 2000-03 | Dependence of the light-current characteristics of 1.55-㎛ broad-area lasers on different p-doping profiles | 한일기; S. H. Cho; P. J. S. Heim; 우덕하; 김선호; J. H. Song; F. G. Johnson; M. Dagenais |
| 1993-01 | Deposition temperature dependence of electrical instability in InP MIS provided by PECVD silicon nitride. | 강광남; 이정일; 한일기; M. B. Lee; Y. J. Lee; H. Lim |
| 2013-01 | Design and Fabrication of 1.35-μm Laser Diodes With Full Digital-Alloy InGaAlAs MQW | 허두창; 송진동; 한일기; 최원준; 이용탁 |
| 2003-06 | Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs | 황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 한해욱 |
| 2003-08 | Development of quantum dot VCSEL array modules | 최원준; 한일기 |
| 1996-01 | Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2. | 강광남; 김회종; W. J. Choi; 이석; D. Woo; 한일기; S. K. Kim; S. H. Kim; 이정일 |
| 2007-09 | Dislocation related defect states in GaN irradiated with 1 MeV electron-beam | 이동욱; 하임경; 김진석; 김은규; 고의관; 한일기 |
| 2008-04 | Dislocation related defect states in GaN irradiated with 1 MeV electron-beam | 이동욱; 하임경; 김진석; 김은규; 고의관; 한일기 |
| 2013-09 | Down-conversion effect on GaAs single junction solar cell using CdSe quantum dots | 한일기; 송진동; 박준서; 고형덕; 김지훈; 김은겸 |
| 2013-02 | Droplet epitaxy 법을 이용한 GaAs quantum ring 형성 | 이은혜; 송진동; 김지훈; 김수연; 배민환; 연규혁; 김준영; 한일기; 장수경; 김종수 |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | 송진동; 박용주; 한일기; 최원준; 조운조; 이정일; 조용훈; 이정용 |
| 2004-05 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | 송진동; 박용주; 한일기; 최원준; 이정일 |
| 2003-10 | Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication | 송진동; 박영민; 임재구; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일 |
| 2005-03 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | 임재구; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일; T.W. Kim; H S Kim; C G Park |
| 2002-10 | Effect of linewidth enhancement factor in the 1.55-㎛ MQW high-power laser diodes | 한일기; 조시형; 이정일 |
| 2008-11 | Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots | 프로리안 꼴러에; 이정일; 유병용; 한일기; 최원준; 송진동; 제랄드 지보도 |
| 1994-01 | Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapor deposition. | 강광남; 이정일; 한일기; C. H. Kim; S. D. Kwon; B. Choe; H. L. Park; J. Her; H. Lim |
| 2003-08 | Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots | 임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일 |
| 2014-08 | Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum Dots | 김수연; 송진동; 한일기; 김태환 |
| 2012-07 | Effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions | 김수연; 송진동; 한일기; TW KIM |
| 2003-12 | Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy | 송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경 |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | J.S. Kim; 김은규; K. Park; E. Yoon; 한일기; 박용주 |
| 2003-04 | Effects of the linewidth enhancement factor on filamentation in 1.55 μm broad-area laser diodes | 허두창; 한일기; 이정일; 정지채; 조시형 |
| 2010-05 | Effects of thermal annealing on the efficiency of bulk-heterojunction organic photovoltaic devices | 정진욱; 허진우; 이정익; 추혜용; 한일기; 주병권 |
| 2004-08 | Effects of V/III flux ratio on Curie temperature of GaMnAs layer | 고동완; 박진범; 김광무; 박용주; 한일기; 이정일; Y.M. Kim; I.W. Park |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InGa/GaAs quantum dots with size distribution | 황성호; 이정일; 송진동; 최원준; 한일기; 장수경 |
| 2003-11 | Electrical and optical characterization of energy states in self-assembled semiconductor quantum dots with size distribution | 황성호; 이정일; 최원준; 한일기; 장수경 |
| 2006-06 | Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser | Eun Kyu KIM; Ji Sun PARK; Jin Soak KIM; 한일기; 송진동 |
| 1992-01 | Electrical properties of SiNx/InP structure. | 강광남; 이정일; 김충환; 권상덕; 최병두; 임한조; 한일기 |
| 2010-08 | Emission characteristic of ZnO nanowire-coupled photonic crystal waveguide | 장동기; 이정일; 한일기 |
