| 1998-07 | Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer | Choi, WJ; Han, SM; Shah, SI; Choi, SG; Woo, DH; Lee, S; Kim, SH; Lee, JI; Kang, KN; Cho, J |
| 2000-05 | Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers | Yi, HT; Cho, J; Choi, WJ; Woo, DH; Kim, SH; Kang, KN |
| 2004-09 | Dependence of the intermixing in InGaAs/InGaAsP quantum well on capping layers | Choi, WJ; Yi, HT; Lee, JI; Woo, DH |
| 2005-03 | Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2005-12 | Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure | Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, YH |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2003-06 | High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels | Choi, CS; Kang, HS; Choi, WY; Kim, HJ; Choi, WJ; Kim, DH; Jang, KC; Seo, KS |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2006-04-01 | InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure | Choi, WJ; Song, JD; Lee, JI; Kim, KC; Kim, TG |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 2005-06 | Linearization of a multiple quantum well electro-absorption modulator by using quantum well intermixing | Choi, WJ; Yi, JC |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 2005 | Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma | Nam, HD; Song, JD; Choi, WJ; Lee, JI; Yang, HS |
| 1998-08 | Optical characterization of GaAs/AlAs short period superlattices | Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2002 | P-channel MODFET as an optoelectronic detector | Kim, HJ; Kim, DM; Han, IK; Choi, WJ; Zimmermann, J; Lee, J |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
| 2005-03 | Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 2006-02 | Polarized optical properties of a GaInP lateral superlattice | Min, KI; Lim, JR; Kim, JS; Rho, H; Hahn, JR; Song, JD; Choi, WJ; Kim, JM; Lee, YT |
| 2005-02 | Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy | Choi, WJ; Rho, H; Song, JD; Lee, JI; Cho, YH |
