Browsing byAuthorWoo, DH
Showing results 23 to 47 of 47
| Issue Date | Title | Author(s) |
|---|---|---|
| 2000-04 | Gas-source molecular-beam epitaxial growth and optical characterization of AlxGa1-xP (0 <= x <= 78) alloy films | Choi, SG; Woo, DH; Kim, SH; Oh, MS; Kim, YD |
| 1996-06 | Going beyond the mean-field approximations of alloys and alloy superlattices: A few puzzles solved? | Kim, DS; Ko, HS; Lim, YS; Kim, YM; Lee, JS; Rhee, SJ; Kim, WS; Hong, SC; Yee, YH; Khim, JS; Jung, JM; Huhr, S; Lee, JH; Chang, JS; Choe, BD; Woo, JC; Song, PH; Choi, HJ; Jhi, SH; Ihm, J; Shin, EJ; Kim, D; Woo, DH; Kang, KN; Song, JJ |
| 1998-02-02 | High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Woo, DH; Kim, SI; Kim, SH; Lee, JI; Kang, KN; Cho, K |
| 2000-02-17 | Improved performances or AlGaAs-GaAsNpnP optical thyristor using bottom mirror layers | Kim, DG; Lee, JJ; Choi, YW; Lee, S; Woo, DH; Kang, BK; Kim, SH |
| 2001-03 | InP/InGaAsP multiple quantum well multimode interference coupler | Shim, SI; Kim, KT; Kim, KM; Kim, HD; Kim, SE; Park, JH; Woo, DH |
| 2003-01-13 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 mu m | Kim, DG; Lee, HH; Choi, WK; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Nakano, Y |
| 2005-01-10 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window | Choi, WK; Kim, DG; Choi, YW; Lee, S; Woo, DH; Kim, SH |
| 2001-03 | Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes | Han, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 2003-04 | Optical characteristics of PnpN optical thyristor operating at 1.55 mu m | Kim, DG; Lee, HH; Choi, WK; Lee, JJ; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Futakuchi, N; Nakano, Y |
| 1998-08 | Optical characterization of GaAs/AlAs short period superlattices | Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC |
| 2000-02-01 | Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys | Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Woo, DH; Kim, SH |
| 1999-04 | Optical studies on a series of AlAs/GaAs short period superlattices | Oh, MS; Choi, SG; Kim, YD; Woo, DH; Koh, EH; Kim, SH; Kang, KN; Rhee, SJ; Woo, JC |
| 1996-11-15 | Percolation of carriers through low potential channels in thick AlxGa1-xAs (x<0.35) barriers | Kim, DS; Ko, HS; Kim, YM; Rhee, SJ; Hohng, SC; Yee, YH; Kim, WS; Woo, JC; Choi, HJ; Ihm, J; Woo, DH; Kang, KN |
| 1996-10-15 | Probing optical-phonon propagation in GaAs/AlxGa1-xAs quantum-well samples via their nonequilibrium population | Yu, PY; Su, ZP; Kim, DS; Khim, JS; Lim, YS; Yee, YH; Cho, YH; Lee, JS; Lee, JH; Chang, JS; Choe, BD; Woo, DH; Shin, EJ; Kim, D; Arya, K; Song, JJ |
| 2004 | Realization of all-optical full adder using cross-gain modulation | Kim, JH; Kim, SH; Son, CW; Ok, SH; Kim, SJ; Choi, JW; Byun, YT; Jhon, YM; Lee, S; Woo, DH; Kim, SH |
| 2005 | Realization of high-speed all-optical OR gate using cross-gain modulation | Byun, YT; Choi, KS; Jhon, YM; Woo, DH; Lee, S; Kim, SH |
| 1996-04 | Spatial and dynamical properties of optical phonons in AlxGa1-xAs and GaAs/AlxGa1-xAs superlattices: Beyond the mean field approach | Kim, DS; Song, PH; Jhi, SH; Lim, YS; Shin, EJ; Yee, YH; Khim, JS; Ihm, J; Lee, JH; Chang, JS; Woo, DH; Kang, KN; Kim, D; Song, JJ |
| 1997-06 | Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al0.5Ga0.5As alloy | Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC; Woo, DH; Kim, SH; Kang, KN |
| 2000-05 | Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy | Woo, DH; Oh, MS; Koh, EH; Yahng, JS; Kim, SH; Kim, YD |
| 2000-04 | Structure of the quantum well for a broad-band semiconductor optical amplifier | Park, YH; Kang, BK; Lee, S; Woo, DH; Kim, SH |
| 2000 | The quantum well property of semiconductor optical amplifier for broadband width | Park, YH; Kang, BK; Lee, S; Woo, DH; Kim, SH |
| 1996-10-01 | Thermal stability of sulfur-treated InP investigated by photoluminescence | Han, IK; Woo, DH; Kim, HJ; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Lim, H; Park, HL |
| 1996-10-21 | Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity | Kim, DS; Ko, HS; Kim, YM; Rhee, SJ; Hong, SC; Yee, YH; Yee, DS; Woo, JC; Choi, HJ; Ihm, J; Woo, DH; Kang, KN |
| 2002-05-15 | Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode | Kim, DS; Lee, S; Kim, JH; Woo, DH; Kim, SH; Han, SK |
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