| 1998-10 | A study for the facet evolution of CCl4-doped Al0.5Ga0.5As/GaAs multilayers grown on patterned GaAs substrates by metalorganic chemical vapor deposition | 김효진; 손창식; 박영균; 김은규; 김태환 |
| 1998-10 | Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy | 김제원; 손창식; 심선일; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| 1998-10 | Auger electron microscopy study of AlGaN grown by molecular beam epitaxy | 김제원; 손창식; 박영균; 김용태; 최인훈 |
| 1993-01 | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | 손창식; 김성일; 김용; 이민석; 김무성; 민석기; 곽명현; 마동성 |
| 1996-01 | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | 손창식; 민병돈; 박만장; 황성민; 김성일; 김무성; 민석기 |
| 1993-01 | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | 손창식; 김성일; 김용; 이민석; 민석기; 김무성; 최인훈 |
| 1997-10 | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | 손창식; 김성일; 김용; 박영균; 김은규; 민석기; 최인훈 |
| 1996-07 | CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질 | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
| 1994-01 | CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성 | 김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기 |
| 2005-07 | Characteristics of Er-Implanted GaN | 손창식; 김성일; 김용태; Akihiro Wakahara; Homero C. Lopez; 장호정 |
| 2004-12 | Characteristics of Vanadium-Tungsten-Oxide Bolometric Thin Films for Uncooled IR Detectors | 한용희; 최인훈; 문성욱; 손창식 |
| 1999-07 | Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy | 김제원; 손창식; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| 1996-08 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | 김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기 |
| 1996-01 | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | 손창식; 박만장; 민병돈; 황성민; 김성일; 김은규; 민석기 |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD. | 손창식; 조신호; 최인훈; 김성일; 김용태; 정상욱 |
| 1997-02 | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | 손창식; 김성일; 김용; 박영균; 민병돈; 황성민; 김은규; 민석기; 최인훈 |
| 1997-04 | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | 손창식; 김성일; 김용; 황성민; 박영균; 김은규; 민석기; 최인철 |
| 1997-08 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | 손창식; 김성일; 김용; 박영균; 김은규; 민석기; 최인훈 |
| 1997-12 | Dependence of electrical properties on the crystallographic orientation of CBr//4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | 김성일; 민석기; 최인훈; 손창식; 김은규 |
| 1997-05 | Dependence of the electrical properties of carbon-doped GaAs and AlGaAs epilayers on the surface crystallographica orientation | 손창식; 박영균; 이승백; 김용; 김은규; 최인훈; 김성일; 민석기 |
| 2004-12 | Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition | 손창식; 김상문; 김영환; 김성일; 김용태; 윤기현; 최인훈; Homero C. Lopez |
| 1997-10 | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | 박영균; 김성일; 김용; 손창식; 김은규; 민석기 |
| 1998-03 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | 박영균; 손창식; 김성일; 김용; 김은규; 민석기; 최인훈 |
| 1996-01 | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | 손창식; 김성일; 민석기; 김은규; 김용; 최인훈 |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | 김태근; 박정호; 김용; 김성일; 손창식; 김무성; 김은규; 민석기 |
| 1996-01 | Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs. | 손창식; 김성일; 김태근; 김용; 김무성; 민석기 |
| 1996-01 | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | 손창식; 김성일; 민병돈; 이상배; 김은규; 민석기; 최인훈 |
| 1996-01 | Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs. | 김성일; 손창식; 김태근; 김용; 김무성; 민석기 |
| 1997-10 | Electrical and optical properties of quantum wire laser | J. C. Jang; 김성일; 황승민; 김효진; 손창식; J. H. Park; 박영균; 김은규; 민석기; 김태완 |
| 1996-01 | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | 손창식; 김성일; 김은규; 민병돈; 민석기; 최인훈 |
