Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.

Authors
손창식김성일민병돈김은규민석기최인훈
Issue Date
1996-01
Citation
Japanese journal of applied physics, v.v. 35, no.no. 12B, pp.225 - 228
Keywords
carbon
URI
https://pubs.kist.re.kr/handle/201004/144786
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE