KIST Library Institutional Repository

Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.

Authors

손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈

Issue Date

1996-01

Citation

Japanese journal of applied physics, v.v. 35, no.no. 12B, pp.225 - 228

Keywords

carbon

URI

https://pubs.kist.re.kr/handle/201004/144786

Appears in Collections:

KIST Article > Others

Files in This Item:

There are no files associated with this item.

Export

RIS (EndNote)

XLS (Excel)

XML