| 1996-10 | Fabrication and characterization modulation-doped-field-effect-transistors with antidot-patterned passivation layers. | 김은규; 민석기; 김무성; 황성우; 김태근; 한철구; 박정호; Y. S. Yu; W. I. Ha |
| - | Fabrication of in-plane gated transistor with electron-beam lighography technique | 한철구; 김광무; 정석구; 최범호; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| - | Fabrication of quantum structures by using patterned gallium oxide deposited GaAs substrates | Park Young Ju; Min Suk-Ki; KIM EUN KYU; 한철구; 김광무; 장영준; 오치성; PARK JEONG HO |
| 1996-01 | GaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구 | 손창식; 진현철; 한철구; 이정훈; 강준모; 김용; 김무성; 민석기; 김창수 |
| 1998-07 | Localization of quantum dots by using a patterned gallium oxide mask layer | 박용주; 한철구; 장영준; 오치성; 정석구; 고동완; 김광무; 김은규; 민석기 |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Optical characterization of self-organized InAs quantum dots grown by molecular beam epitaxy | KIM EUN KYU; Min Suk-Ki; S. Cho; C. S. Oh; 한철구 |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE). | SON CHANG-SIK; 전인상; 한철구; 이정훈; JIN HYOUN CHER; KIM MOO SUNG; Min Suk-Ki |
| - | Selective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy | Park Young Ju; 한철구; 김광무; 정석구; KIM EUN KYU; Min Suk-Ki |
| - | Selective formation of InAs quantum dot structure by molecular beam epitaxy | 한철구; 장영준; 오치성; Park Young Ju; KPARK KYUNG HYUN; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| 1997-11 | 양극 산화법에 의한 자연 산화막의 특성 및 응용 | 박용주; 민석기; 김은규; 장영준; 한철구; 김광무; 오치성; 박창엽 |
| 1997-03 | 전자선 리소그라피법에 의한 동일평면게이크 트랜지스터의 제작과 특성 연구 . | 김은규; 민석기; 김광무; 한철구; 정석구; 박종윤; 박종호 |
