| 1994-06-15 | 2-TEMPERATURE TECHNIQUE FOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION GROWTH OF SILICON-NITRIDE ON INP | HER, J; LIM, H; KIM, CH; HAN, IK; LEE, JI; KANG, KN; KIM, JE; PARK, HY |
| 1993-03 | CONSTANT CAPACITANCE TECHNIQUE TO STUDY ELECTRICAL INSTABILITIES IN INP MIS PROVIDED BY PECVD SILICON-NITRIDE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; PARK, HL; LIM, H |
| 1993-01-15 | DEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRICAL INSTABILITY IN AN INP METAL-INSULATOR SEMICONDUCTOR CAPACITOR PROVIDED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE | LEE, MB; HAN, IK; LEE, YJ; LEE, JI; KANG, KN; LIM, H |
| 1994-04-15 | EFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION | KIM, CH; HAN, IK; LEE, JI; KANG, KN; KWON, SD; CHOE, B; PARK, HL; HER, J; LIM, H |
| 1994-03-01 | ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION | CHOI, WJ; LEE, JI; HAN, IK; KANG, KN; KIM, Y; PARK, HL; CHO, K |
| 1991-05 | GROWTH AND CHARACTERIZATION OF SILICON-NITRIDE FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION | HAN, IK; LEE, YJ; JO, JW; LEE, JI; KANG, KN |
| 1991-05-01 | HEATING EFFECT IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE | HAN, IK; LEE, YJ; JO, JH; LEE, JI; KANG, KN |
| 1995-05 | HR-COATED FACET EFFECT ON THE SPECTRAL CHARACTERISTICS OF A 3-SECTION DBR TUNABLE LASER | LEE, S; CHOI, WJ; HAN, IK; WOO, DH; KIM, SH; LEE, JI; KANG, KN; PARK, HL |
| 1994-12 | LOW DARK CURRENT AND HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON SULFUR-TREATED INP | HAN, IK; HER, J; BYUN, YT; LEE, S; WOO, DH; LEE, Jung Il; KIM, SH; KANG, KN; PARK, HL |
| 1990-10-11 | SIMPLE METHOD TO EXTRACT GATE VOLTAGE DEPENDENT SOURCE DRAIN RESISTANCE IN MOSFETS | LEE, JI; LEE, MB; LEE, YJ; HAN, IK; KANG, KN; PARK, KO |
| 1992-12-15 | SPECTROSCOPIC ELLIPSOMETRIC MEASUREMENTS OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION-GROWN SINXINP STRUCTURE | HAN, IK; LEE, YJ; LEE, JI; KANG, KN; KIM, SY |
| 1992-11-15 | STUDY OF CHARGE TRAPPING INSTABILITIES IN A SILICON-NITRIDE INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE CONSTANT-CAPACITANCE METHOD | KIM, CH; CHOE, BD; LIM, H; HAN, IK; LEE, JI; KANG, KN |
| 1993-10 | STUDY ON THE LOW-FIELD CHARGE-TRAPPING PHENOMENA IN THE SILICON-NITRIDE INP STRUCTURE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; HER, J; LIM, H |
