| 1999-06 | A silicon self assembled quantum dot transistor operating at room temperature. | Choi, BH; Hwang, SW; Kim, IG; Shin, HC; Kim, Y; Kim, EK |
| 2000-10-16 | Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs | Hyon, CK; Choi, SC; Song, SH; Hwang, SW; Son, MH; Ahn, D; Park, YJ; Kim, EK |
| 1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1999-07-12 | Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, MH; Hwang, SW; Yoo, KH |
| 1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 2004-07-01 | Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices | Son, SH; Cho, KH; Hwang, SW; Kim, KM; Park, YJ; Yu, YS; Ahn, D |
| 1999-12 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Song, SH; Hwang, SW; Park, JH; Kim, Y; Kim, EK |
| 1999-08 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Hyon, CK; Park, JH; Hwang, SW; Ahn, D; Son, MH; Min, BD; Kim, Y; Kim, EK |
| 1998-11-23 | Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor | Choi, BH; Hwang, SW; Kim, IG; Shin, HC; Kim, Y; Kim, EK |
| 2000 | Fabrication of horn shape antenna array using SU-8 & application to the bolometer | Sim, T; Moon, S; Hwang, SW; Chae, K; Oh, M |
| 2000-05 | Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot | Jung, SK; Hwang, SW; Ahn, D; Park, JH; Kim, Y; Kim, EK |
| 2005-07-01 | Improvement of field emission from printed carbon nanotubes by a critical bias field | Lee, HJ; Moon, SI; Kim, JK; Lee, YD; Nahm, S; Yoo, JE; Han, JH; Lee, YH; Hwang, SW; Ju, BK |
| 2005-07-22 | Miniaturized fluorescence detection system to remove background noise of the incident light using micro mirror and lens | Jang, JM; Shin, HJ; Hwang, SW; Yang, EG; Yoon, DS; Kim, TS; Kang, JY |
| 2001-07 | Nano mold lithography for 40-nm patterns | Park, CM; Choi, BH; Hyon, CK; Hwang, SW; Ahn, D; Kim, EK |
| 1999-12 | Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
| 2001-09 | Patterned formation of InAs QDs for single-electron device applications | Son, MH; Choi, BH; Hwang, SW; Ahn, D; Hyon, CK; Kim, EK; Kim, Y; Lim, JS |
| 2001-03-05 | Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate | Choi, BH; Park, CM; Song, SH; Son, MH; Hwang, SW; Ahn, D; Kim, EK |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2002-12 | Single-electron tunneling through a heavily doped GaAs quantum dot | Son, SH; Choi, BH; Cho, KH; Hwang, SW; Park, YM; Park, YJ; Kim, EK; Ahn, D |
