| - | Characteristics of a-Si:H films prepared by ECRPVD | 강문상; Lim Tae Hoon; Oh In Hwan; JEON BUP JU |
| - | Characteristics of Cu/C films on polymer substrate by ECR chemical vapor deposition | Lee Joong Kee; JEON BUP JU; Cho Byung Won; Park Dal keun; 고형덕; Byun Dongjin |
| - | Characteristics of Cu/C films on polymer substrate by ECR chemical vapor deposition | Lee Joong Kee; JEON BUP JU; Cho Byung Won; Park Dal keun; 고형덕; Byun Dongjin |
| - | Characteristics of silicon oxide films prepared by chemical vapor deposition and dry oxidation method using ECR plasma sources. | JEON BUP JU; 허정수; 윤용수; 정일현; Oh In Hwan; Lim Tae Hoon |
| - | Effect of Pretreatment on the adhesion of copper film on PET substrate prepared by ECR-MOCVD coupled with a periodic DC bias | JEON BUP JU; 현진; 변동진; Lee, Joong Kee |
| - | Effect of silicon orientation on the electrical properties of SiO//2 using oxygen plasma. | Oh In Hwan; Lim Tae Hoon; 허정수; JEON BUP JU; 정일현 |
| - | Effects of process parameters on the adhesion of copper film on polyethylene tetrephthalate(PET) substrate prepared by ECRMOCVD coupled with a periodic DC bias | Jin Hyun; JEON BUP JU; Dongjin Byun; Lee, Joong Kee |
| - | Electrical characteristics of silicon oxide films prepared by chemical vapor deposition method using ECR plama sources. | JEON BUP JU; 허정수; 윤용수; 정일현; Oh In Hwan; Lim Tae Hoon |
| - | Influence of the process parameters on the surface resistance of Cu/C films on polymer substrates prepared at ambient temperature by ECR-chemical vapor deposition. | Lee Joong Kee; JEON BUP JU; 고형덕; Byun Dongjin; Park Dal keun |
| - | Low temperature preparation of SiO2 films with low interface trap density using diffusion and CVD method | JEON BUP JU; Lim Tae Hoon; Oh In Hwan |
| - | Preparation of silicon oxide films using electron cyclotron resonance oxygen plasma | 허정수; JEON BUP JU; 윤용수; 정일현; Oh In Hwan; Lim Tae Hoon |
| - | The characteristics of a-Si:H films as a function of H2/SiH4 ratio in EVR CVD | 강문상; JEON BUP JU; Lim Tae Hoon; Oh In Hwan |
| - | The optical and electrical characteristics of a-Si:H films prepared by ECR CVD | JEON BUP JU; 강문상; Lim Tae Hoon; Oh In Hwan |
