1996-10 | Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-x as a symmetric double quantum wells: AlxGa1-xAs as a percolating barrier | Kim, DS; Ko, HS; Kim, YM; Rhee, SJ; Hong, SC; Yee, YH; Kim, WS; Woo, JC; Choi, HJ; Ihm, J; Woo, DH; Kang, KN |
1998-07 | Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer | Choi, WJ; Han, SM; Shah, SI; Choi, SG; Woo, DH; Lee, S; Kim, SH; Lee, JI; Kang, KN; Cho, J |
2000-05 | Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers | Yi, HT; Cho, J; Choi, WJ; Woo, DH; Kim, SH; Kang, KN |
1998-03-15 | Effects of light on a P-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Kim, SH; Lee, JI; Kang, KN; Cho, K |
1999-02 | Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT | Kim, DM; Song, SH; Kim, HJ; Kang, KN |
1996-06 | Going beyond the mean-field approximations of alloys and alloy superlattices: A few puzzles solved? | Kim, DS; Ko, HS; Lim, YS; Kim, YM; Lee, JS; Rhee, SJ; Kim, WS; Hong, SC; Yee, YH; Khim, JS; Jung, JM; Huhr, S; Lee, JH; Chang, JS; Choe, BD; Woo, JC; Song, PH; Choi, HJ; Jhi, SH; Ihm, J; Shin, EJ; Kim, D; Woo, DH; Kang, KN; Song, JJ |
1998-02-02 | High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Woo, DH; Kim, SI; Kim, SH; Lee, JI; Kang, KN; Cho, K |
1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
1998-08 | Optical characterization of GaAs/AlAs short period superlattices | Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC |
1998-01-08 | Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET | Kim, HJ; Kim, SH; Lee, JI; Kang, KN; Kim, DM; Cho, K |
1999-04 | Optical studies on a series of AlAs/GaAs short period superlattices | Oh, MS; Choi, SG; Kim, YD; Woo, DH; Koh, EH; Kim, SH; Kang, KN; Rhee, SJ; Woo, JC |
1996-11-15 | Percolation of carriers through low potential channels in thick AlxGa1-xAs (x<0.35) barriers | Kim, DS; Ko, HS; Kim, YM; Rhee, SJ; Hohng, SC; Yee, YH; Kim, WS; Woo, JC; Choi, HJ; Ihm, J; Woo, DH; Kang, KN |
1998-01 | Photonic microwave characteristics and modeling of an Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterostructure pseudomorphic HEMT | Song, SH; Kim, DM; Kim, HJ; Kim, SH; Kang, KN; Nathan, MI |
1996-04 | Spatial and dynamical properties of optical phonons in AlxGa1-xAs and GaAs/AlxGa1-xAs superlattices: Beyond the mean field approach | Kim, DS; Song, PH; Jhi, SH; Lim, YS; Shin, EJ; Yee, YH; Khim, JS; Ihm, J; Lee, JH; Chang, JS; Woo, DH; Kang, KN; Kim, D; Song, JJ |
1997-06 | Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al0.5Ga0.5As alloy | Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC; Woo, DH; Kim, SH; Kang, KN |
1997-05-15 | Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy | Han, IK; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Kim, Y; Lim, H; Park, HL |
1996-10-01 | Thermal stability of sulfur-treated InP investigated by photoluminescence | Han, IK; Woo, DH; Kim, HJ; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Lim, H; Park, HL |
1996-10-21 | Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity | Kim, DS; Ko, HS; Kim, YM; Rhee, SJ; Hong, SC; Yee, YH; Yee, DS; Woo, JC; Choi, HJ; Ihm, J; Woo, DH; Kang, KN |