| - | Characteristics of Single Transistor type Ferroelectric Memory Using Pt/SrBi2Ta2O9/Si and Pt/SrBi2Ta2O9/Y2O3/Si Gate Structure | Kim, Yong Tae; SHIN, SUN IL; Jung Ho Park; Kim, Seong Il; Kwon Young Suk |
| - | Development of Etch Stop Process by Using Selective Dry Etching of SrBi2Ta2O9/Y2O3 | SHIN, SUN IL; Kwon Young Suk; Kim, Seong Il; Kim, Yong Tae; Jung Ho Park |
| - | EFFECTS OF SCALED CONTACT DIMENSION ON PHASE CHANGE RANDOM ACCESS MEMORY | Kim, Yong Tae; Park Yu Jin; Kwon Young Suk; Youm Minsoo; Sung Man Young |
| - | Etch stop Process of SrBi2Ta2O9 thin film using CeO2 buffer layer for self aligned ferroelectric gate structure | Kwon Young Suk; SHIN, SUN IL; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; In-Hoon Choi |
| - | Ge-Te Chalcogenide Material for High-Speed Phase-Change Memory | Kim, Yong Tae; Kwon Young Suk; Eun Tae Kim; Choi In-Hoon |
| - | HRTEM Study on the Atomic Arrangement of the Ge2Sb2Te5 Thin Films Deposited on SiO2/Si Substrates by Sputtering Method | Park Yu Jin; 이정용; 염민수; Kwon Young Suk; Kim, Yong Tae |
| - | Material and Electrical Characteristics of SbXTe100-X for Phase Change Random Access Memory | Kim, Yong Tae; Kwon Young Suk; Youm Min Soo; Sung Man Young |
| - | Multibit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
| - | Scaling of Phase Changing Volume Dimension and Material Issues on Phase Change Random Access Memory | Kim, Yong Tae; Youm Min Soo; Kwon Young Suk; Sung Man Young |
| - | Single transistor type ferroelectric memory with Pt/SrBi2Ta2O9/Pt/CeO2/Si MFMIS gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
