| 2004 | 1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Yu, BY; Pyun, CH; Kim, JH; Song, JI; Chovet, A |
| 1999-04-01 | 1/f(gamma) noise in polycrystalline silicon thin-film transistors | Dimitriadis, CA; Brini, J; Lee, JI; Farmakis, FV; Kamarinos, G |
| 2004-12 | Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution | Lee, CM; Choi, SH; Seo, JC; Lee, JI; Leem, JY; Han, IK |
| 2003-02 | Analytic model for photo-response of p-channel MODFET'S | Kim, HJ; Han, I; Choi, WJ; Park, YJ; Cho, WJ; Lee, JI; Kim, DM; Zimmermann, J |
| 2004-08 | Artificial array of InAs quantum dots on a strain-engineered superlattice | Kim, KM; Park, YJ; Son, SH; Lee, SH; Lee, JI; Park, JH; Park, SK |
| 2003-10 | Auger processes in InGaAs QDs grown by using the droplet method | Lee, JI; Han, IK; Koguchi, N; Kuroda, T; Minami, F |
| 2005-02 | Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier | Jung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK |
| 2004-07 | Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-09 | Carrier dynamics in the coupled structure of InGaAs quantum dots in a well | Park, YM; Yoo, KH; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2004-12 | Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A |
| 2003-08 | Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jeong, JC; Han, IK |
| 2005-07 | Characteristics of thermally treated quantum-dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 1999-04-15 | Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering | Dimitriadis, CA; Lee, JI; Patsalas, P; Logothetidis, S; Tassis, DH; Brini, J; Kamarinos, G |
| 2000-06 | Comparison of photoresponsive drain conduction and gate leakage in N-channel pseudomorphic HEMT and MESFET under electro-optical stimulations | Kim, DM; Kim, HJ; Lee, JI; Lee, YJ |
| 2006-03-27 | Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy | Cho, NK; Ryu, SP; Song, JD; Choi, WJ; Lee, JI; Jeon, H |
| 2005-03 | Comparisons of thermal properties between inorganic filler and acid-treated multiwall nanotube/polymer composites | Lee, GW; Lee, JI; Lee, SS; Park, M; Kim, J |
| 2003-07 | CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasers | Heo, DC; Song, JD; Han, IK; Lee, JI; Jeong, JC; Kim, JM; Lee, YT |
| 1998-07 | Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer | Choi, WJ; Han, SM; Shah, SI; Choi, SG; Woo, DH; Lee, S; Kim, SH; Lee, JI; Kang, KN; Cho, J |
| 2004-09 | Dependence of the intermixing in InGaAs/InGaAsP quantum well on capping layers | Choi, WJ; Yi, HT; Lee, JI; Woo, DH |
| 2005-03 | Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H |
| 1996-01 | Effect of alkoxy substitution on photophysical properties of poly(p-phenylenevinylene) | Lee, GJ; Kim, DH; Lee, JI; Shim, HK; Kim, YW; Jo, JC |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 1997-06 | Effect of sapphire nitridation on GaN by MOCVD | Byun, D; Kim, G; Jeong, J; Lee, JI; Park, D; Kum, DW; Kim, B; Yoo, J |
| 1998-03-15 | Effects of light on a P-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Kim, SH; Lee, JI; Kang, KN; Cho, K |
| 2005-01 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Lee, JI; Yoo, KH |
| 2003-06 | Effects of the linewidth enhancement factor on filamentation in 1.55 mu m broad-area laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC; Cho, SH |
| 2004-08 | Effects of the V/III flux ratio on the Curie temperature of GaMnAs | Koh, D; Chung, KS; Park, JB; Kim, KM; Park, YJ; Han, IK; Lee, JI |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
| 2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
