| - | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; MIN BYUNG DON; KIM MOO SUNG; S. K. Park; C. Lee |
| - | Characteristics of laser dry etching for AlGaAs/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; 박세기; MIN BYUNG DON; KIM MOO SUNG; 이천 |
| - | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Direct transport measurements through an ensemble of if InAs self-assembled quantum dots | 정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈 |
| - | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |
| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes | 정석구; MIN BYUNG DON; KIM YOUN; KIM EUN KYU; 현찬경; 황성우; PARK JEONG HO |
| - | Selective growth of InAs quantum dots on pattened Si-SiO₂ substrates | 최범호; Chang-Min Park; 송상헌; 황성우; MIN BYUNG DON; 손맹호; 안도열; Park Young Ju; KIM EUN KYU; Min Suk-Ki |
| - | Selective positioning of InAs quantum dots on GaAs substrate directly by atomic force microscope | 현찬경; 최승철; 김광무; MIN BYUNG DON; 황성우; 안도열; Park Young Ju; KIM EUN KYU |
| - | Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate | KIM YOUN; 정석구; MIN BYUNG DON; KIM EUN KYU; 황성우 |
| - | Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate. | 손맹호; 정석구; MIN BYUNG DON; 현찬경; 최범호; KIM EUN KYU; KIM YOUN; 임종수 |
| - | Surface orientation dependent carbon incorporation in to GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; MIN BYUNG DON; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Theoretical and experimental conversion efficiency of GaAs/AlGaAs solar cell structures grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; MIN BYUNG DON; 황성민; K. K. Kim; M. H. Son; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 박만종 |
| - | Van der-pauw Hall analysis of heavily carbon-doped InGaAs by rapid thermal annealing. | SON CHANG-SIK; MIN BYUNG DON; KIM MOO SUNG; KIM YOUN; Kim Seong Il; Min Suk-Ki |
