| - | Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model | Soon Yong Hwang; Tae Jung Kim; Jun Seok Byun; Nilesh S. Barange; Mangesh S. Diware; Young Dong Kim; David E. Aspnes; Jae Jin Yoon; Shin Sang Hoon; SONG, JIN-DONG |
| - | Combine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS | Shin Sang Hoon; SONG, JIN-DONG |
| - | Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure | Shin Sang Hoon; Lim Ju-Young; SONG, JIN-DONG; Han, Suk Hee; TG Kim |
| - | Ellipsometric study of dielectric response of AlP | Soon Yong Hwang; Jung Yong-Woo; Jun Seok Byun; Seung-Ho Han; Han Gyeol Park; Young Dong Kim; Shin Sang Hoon; SONG, JIN-DONG |
| - | Formation of low density GaAs quantum dots by droplet epitaxy method | Lee Eunhye; SONG, JIN-DONG; Su youn, Kim; Shin Sang Hoon; Han, Il Ki; Lee, Jung Il; J.S. Kim; S.K. Chang |
| - | Growth of 2dimensional hole gas (2DHG) with GaSb channel using III-V materials on InP substrate | Shin Sang Hoon; SONG, JIN-DONG; Han, Suk Hee; T.G. Kim |
| - | Growth of high quality InSb on InxAl1-xSb grading buffer on GaAs (x=1→0) | Shin Sang Hoon; SONG, JIN-DONG; Han, Suk Hee; T. G. KIM |
| - | Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs) | SONG, JIN-DONG; Lim Ju-Young; Shin Sang Hoon; Chang, Joonyeon; Choi, Won Jun |
| - | GROWTH OF HIGH-QUALITY THIN InSb FILMS (<0.6 μm) GROWN ON GaAs SUBSTRATE WITH InxAl1-xSb CONTINUOUSLY GRADED BUFFER | Shin Sang Hoon; SONG, JIN-DONG; T.G, Kim |
| - | Growth of Sb-based compound semiconductor nano structures for the application to high-speed electronics and infrared sensors | SONG, JIN-DONG; Lim Ju Young; Shin Sang Hoon; Su youn, Kim; Lee Eunhye |
| - | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs | SONG, JIN-DONG; Kim Hyung-jun; Shin Sang Hoon; Su youn, Kim |
| - | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
| - | InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor | SONG, JIN-DONG; Kim Hyung-jun; Lim Ju-Young; Shin Sang Hoon; 김경호; Chang, Joonyeon |
| - | InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor | SONG, JIN-DONG; Kim Hyung-jun; Lim Ju-Young; Shin Sang Hoon; 김경호; Chang, Joonyeon; SW LEE |
| - | InSb-based switching device operating at room temperature using magnetic controlled avalanche process for the application to magnetologic devices | SONG, JIN-DONG; Hong Jinki; Joo Sung Jung; Shin Sang Hoon; Han, Suk Hee; Shin, Kyung Ho |
| - | Large magnetoresistance at room temperature in InSb | Joo Sung Jung; T Y Kim; J. S. Lee; Shin Sang Hoon; SONG, JIN-DONG; Shin, Kyung Ho; K. Rhie; Hong Jinki |
| - | Low density GaAs quantum dots grown by droplet epitaxy | Lee Eunhye; SONG, JIN-DONG; Su youn, Kim; Shin Sang Hoon; Han, Il Ki; Lee, Jung Il; Jongsu Kim; S.K. Chang |
| - | Magneto-reconfigurable semiconductor logic at room temperature | Sungjung Joo; Kim Tae-Yueb; Shin Sang Hoon; Ju Young Lim; Jinki Hong; SONG, JIN-DONG; Chang, Joonyeon; Hyun-Woo Lee; Kungwon Rhie; Han, Suk Hee; Shin, Kyung Ho; Mark Johnson |
| - | Parametric growth of InAlSb meta-morphic buffer layers on GaAs for the application to InSb-based electronic devices | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee; T G KIM |
| - | Physical properties of 808-nm InAlAs/AlGaAs quantum dots on GaAs substrate | Su youn, Kim; Lee Eunhye; Ha Seung Kyu; Shin Sang Hoon; SONG, JIN-DONG; Han, Il Ki; Lee, Jung Il; T.W. Kim |
| - | Structural and electrical properties of InAs thin films grown on AlAs0.32Sb0.68 meta-morphic buffer layer/GaAs for application as THz emitters | Su youn, Kim; Shin Sang Hoon; SONG, JIN-DONG; Han, Il Ki; T W KIM; Y D Jho |
| - | Structural and optical properties of InAlAs/AlGaAs self-assembled quantum dots on GaAs substrate for the 808-nm wavelength | Su youn, Kim; SONG, JIN-DONG; Lee Eunhye; Ha Seung Kyu; Shin Sang Hoon; Han, Il Ki; Lee, Jung Il; T.W. Kim |
| - | Study of the surface morphology of AlSb on GaAs grown by MBE and real-time growth monitoring by using in situ ellipsometry | Kim Jun Young; Yoon Jae Jin; Lee Eunhye; SONG, JIN-DONG; Shin Sang Hoon; Tae Jung Kim; Young Dong Kim |
| - | Temperature dependence of the dielectric response of AlSb | Jung Yong-Woo; Tae Jung Kim; Young Dong Kim; Shin Sang Hoon; Su youn, Kim; SONG, JIN-DONG |
| - | The effect of various sacrifice-layers on the electrical properties of thick InSb layers grown on GaAs wafers | Shin Sang Hoon; Lim Ju-Young; Su youn, Kim; SONG, JIN-DONG; TG Kim |
| - | The growth of thin InSb using CGB technique and comparison with the electron mobility and doping density | Shin Sang Hoon; SONG, JIN-DONG |
| - | (Undefined) | 김준영; Jung Yong-Woo; 김태중; 황순용; Nilesh Barange; 김영동; Shin Sang Hoon; SONG, JIN-DONG |
| - | (Undefined) | Jung Yong-Woo; 변준석; 황순용; 김태중; 김영동; Shin Sang Hoon; SONG, JIN-DONG |
| - | (Undefined) | Shin Sang Hoon; SONG, JIN-DONG; T.G, Kim |
| - | (Undefined) | SONG, JIN-DONG; Shin Sang Hoon; Su youn, Kim; Lee Eunhye |
