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Showing results 1 to 30 of 83

Issue DateTitleAuthor(s)
2017-1210-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital EtchLu, W.; Roh, I. P.; Geum, D. -M.; del Alamo, J. A.; Song, J. D.; Kong, L.; Kim, S. -H.
2023-03A broadband high-brightness quantum-dot double solid immersion lens single photon sourceAhn, D. H.; Jang, Y. D.; Baek, J. S.; Park, S. I.; Song, J. D.; Lee, D.
2010-10A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 mu m surface emitting laser diodesCho, N. K.; Kim, K. W.; Song, J. D.; Choi, W. J.; Lee, J. I.
2013-11-29Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric modelHwang, S. Y.; Kim, T. J.; Byun, J. S.; Barange, N. S.; Diware, M. S.; Kim, Y. D.; Aspnes, D. E.; Yoon, J. J.; Song, J. D.
2015-11-02Anomalous diamagnetic shifts in InP-GaP lateral quantum-wiresShin, Y. H.; Choi, B. K.; Kim, Yongmin; Song, J. D.; Nakamura, D.; Matsuda, Y. H.; Takeyama, S.
2013-01-21Asymmetry of localised states in a single quantum ring: Polarization dependence of excitons and biexcitonsKim, H. D.; Kyhm, K.; Taylor, R. A.; Nogues, G.; Je, K. C.; Lee, E. H.; Song, J. D.
2008-06Atomic force microscopy and polarized Raman spectroscopy of (GaP)(n)/(InP)(n) short-period supeflattice structuresLim, Jung-Ran; Rho, Heesuk; Song, J. D.; Choi, W. J.; Lee, Y. T.
2007-01-30Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxyKim, J. H.; Park, Y. J.; Park, Y. M.; Song, J. D.; Lee, J. I.; Kim, T. W.
2006-08Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processesLim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S.
2015-12Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnNLee, J. W.; Shon, Yoon; Subramaniam, N. G.; Kwon, Y. H.; Kang, T. W.; Im, Hyunsik; Kim, H. S.; Park, C. S.; Kim, E. K.; Song, J. D.; Koo, H. C.; Fu, D. J.
2011-11-07Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxyShon, Yoon; Lee, Sejoon; Yoon, Im Taek; Jeon, H. C.; Lee, D. J.; Kang, T. W.; Song, J. D.; Yoon, Chong S.; Kim, D. Y.; Park, C. S.
2021-01-26Coherent Dynamics in Quantum Emitters under Dichromatic ExcitationKoong, Z. X.; Scerri, E.; Rambach, M.; Cygorek, M.; Brotons-Gisbert, M.; Picard, R.; Ma, Y.; Park, S., I; Song, J. D.; Gauger, E. M.; Gerardot, B. D.
2021Coherent frequency-conversion of quantum dot photons to the telecommunication C-band for quantum communication applicationsGraffitti, Francesco; Morrison, Christopher; Rambach, Markus; Koong, Zhe Xian; Thorburn, Fiona; Ma, Y.; Park, S., I; Song, J. D.; Kar, Ajoy K.; Fedrizzi, Alessandro; Gerardot, Brian D.
2023-11Crystal orientation dependence of photoluminescence of CuCl grown on Si (001) and Si (111)Song, J. D.; Lim, J. Y.; Park, Seoung-Hwan; Ahn, Doyeol
2007-10Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dotsArpatzanis, N.; Tassis, D. H.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I.
2013-10-25Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxyTighineanu, P.; Daveau, R.; Lee, E. H.; Song, J. D.; Stobbe, S.; Lodahl, P.
2013-05-07Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layerAn, C. S.; Jang, Y. D.; Lee, H.; Lee, D.; Song, J. D.; Choi, W. J.
2018-07-20Deterministic coupling of epitaxial semiconductor quantum dots to hyperbolic metamaterialJang, Y. D.; Baek, J. S.; Devaraj, V.; Kim, M. D.; Song, J. D.; Wang, Y.; Zhang, X.; Lee, D.
2014-02-25Dielectric function and critical points of AlP determined by spectroscopic ellipsometryHwang, S. Y.; Kim, T. J.; Jung, Y. W.; Barange, N. S.; Park, H. G.; Kim, J. Y.; Kang, Y. R.; Kim, Y. D.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.
2010-09-13Dielectric functions and interband transitions of In1-xAlxSb alloysYoon, J. J.; Kim, T. J.; Jung, Y. W.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D.
2014-09Dielectric functions and interband transitions of InxAl1 (-) P-x alloysKim, T. J.; Hwang, S. Y.; Byun, J. S.; Aspnes, D. E.; Lee, E. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Park, H. G.; Choi, J.; Kim, J. Y.; Kang, Y. R.; Park, J. C.; Kim, Y. D.
2011-09-01Dielectric response of AlP by in-situ ellipsometryJung, Y. W.; Byun, J. S.; Hwang, S. Y.; Kim, Y. D.; Shin, S. H.; Song, J. D.
2009-06-08Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometryJung, Y. W.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D.
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxyRyu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G.
2010-02Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrateLim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S.
2014-04Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar CellPark, M. H.; Kim, H. S.; Park, S. J.; Song, J. D.; Kim, S. H.; Lee, Y. J.; Choi, W. J.; Park, J. H.
2011-05Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer LayerKim, S. Y.; Song, J. D.; Kim, T. W.
2007-09-01Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structuresArpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C.
2007-07-15Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diodeRyu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H.
2014-08Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum DotsKim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W.
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