Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

Authors
Lee, JMLee, KIChang, JYHam, MHHuh, KSMyoung, JMHwang, WJShin, MWHan, SHKim, HJLee, WY
Issue Date
2003-09
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v.69, no.2-4, pp.283 - 287
Abstract
The magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T-c), providing T-c approximate to 550 K and T-c approximate to 700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magneto-resistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2003 Elsevier B.V. All rights reserved.
Keywords
MOLECULAR-BEAM-EPITAXY; DILUTED MAGNETIC SEMICONDUCTORS; ROOM-TEMPERATURE; MOLECULAR-BEAM-EPITAXY; DILUTED MAGNETIC SEMICONDUCTORS; ROOM-TEMPERATURE; diluted magnetic semiconductor; carrier-mediated ferromagnetism; wide bandgap ferromagnetic semiconductor; negative magnetoresistance
ISSN
0167-9317
URI
https://pubs.kist.re.kr/handle/201004/138281
DOI
10.1016/S0167-9317(03)00311-3
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KIST Article > 2003
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