Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films
- Authors
- Lee, JM; Lee, KI; Chang, JY; Ham, MH; Huh, KS; Myoung, JM; Hwang, WJ; Shin, MW; Han, SH; Kim, HJ; Lee, WY
- Issue Date
- 2003-09
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- MICROELECTRONIC ENGINEERING, v.69, no.2-4, pp.283 - 287
- Abstract
- The magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T-c), providing T-c approximate to 550 K and T-c approximate to 700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magneto-resistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2003 Elsevier B.V. All rights reserved.
- Keywords
- MOLECULAR-BEAM-EPITAXY; DILUTED MAGNETIC SEMICONDUCTORS; ROOM-TEMPERATURE; MOLECULAR-BEAM-EPITAXY; DILUTED MAGNETIC SEMICONDUCTORS; ROOM-TEMPERATURE; diluted magnetic semiconductor; carrier-mediated ferromagnetism; wide bandgap ferromagnetic semiconductor; negative magnetoresistance
- ISSN
- 0167-9317
- URI
- https://pubs.kist.re.kr/handle/201004/138281
- DOI
- 10.1016/S0167-9317(03)00311-3
- Appears in Collections:
- KIST Article > 2003
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