Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Authors
Lee, YHKim, DHShin, KSChoi, CHJang, YTJu, BK
Issue Date
2003-05-19
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.82, no.20, pp.3535 - 3537
Abstract
A simple fabrication of gate-controlled nanodevices made of the Co nanodots on tungsten (W)-nanowire templates by using conventional photolithography and a thin film technique is reported. The combined multiple grain nanobridge allows the observation of the Coulomb gap up to a temperature as high as 200 K and shows nonlinear current-voltage characteristics up to 250 K. The combination of Co dots with straight W-nanowire templates opens possibilities of reproducible blockade devices. (C) 2003 American Institute of Physics.
Keywords
SINGLE-ELECTRON; SYSTEM; MEMORY; SINGLE-ELECTRON; SYSTEM; MEMORY
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/138565
DOI
10.1063/1.1571978
Appears in Collections:
KIST Article > 2003
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