Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique
- Authors
- Lee, YH; Kim, DH; Shin, KS; Choi, CH; Jang, YT; Ju, BK
- Issue Date
- 2003-05-19
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.82, no.20, pp.3535 - 3537
- Abstract
- A simple fabrication of gate-controlled nanodevices made of the Co nanodots on tungsten (W)-nanowire templates by using conventional photolithography and a thin film technique is reported. The combined multiple grain nanobridge allows the observation of the Coulomb gap up to a temperature as high as 200 K and shows nonlinear current-voltage characteristics up to 250 K. The combination of Co dots with straight W-nanowire templates opens possibilities of reproducible blockade devices. (C) 2003 American Institute of Physics.
- Keywords
- SINGLE-ELECTRON; SYSTEM; MEMORY; SINGLE-ELECTRON; SYSTEM; MEMORY
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/138565
- DOI
- 10.1063/1.1571978
- Appears in Collections:
- KIST Article > 2003
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