다공성 SiO2/Ito 나노박막의 전기적 특성

Abstract

The electrical properties of porous SiO2/ITO nano thin film were studied by complex impedance and conductive mechani는 were analyzed. According to the results of complex impedance, the activation energ of SiO2/ITO and Zn-SiO2/ITO were 0.309eV, 0.077eV in below 450℃ and 0.147 eV in over 450℃, respectively. In case of SiO2/ITO, slightly direct tunneling occurred at room temperature. The contributio for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over 300℃ by Thermally assisted tunneling. In case of Zn-SiO2/ITO, high conductivity in 1.26 Ω-1.㎝-1 at room temperature appeared by space charge conduction of Frenkel-poole emission that Zn ions play a role as localized electron states.