Decrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication

Other Titles
DLC-coated Si-tip FEA 제조에 있어서 Al 희생층을 이용한 게이트 누설 전류의 감소
Authors
주병권이상조김훈이윤희오명환
Issue Date
1999-08
Publisher
대한전기학회
Citation
대한전기학회논문지 : 전기물성,응용부문 C = The Transactions of The Korean Institute of Electrical Engineers, v.48C, no.8, pp.577 - 579
Keywords
FED; Si-tip field emitter; DLC; gate-leakage current; sacrificial layer; field emission; field emission display
URI
https://pubs.kist.re.kr/handle/201004/142012
Appears in Collections:
KIST Article > Others
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