Effect of the microstructure on the NOx gas-sensing characteristics of WO3 thin-film sensors
- Authors
- Yoo, KS; Oh, YJ; Kim, TS; Yoon, YS; Kim, CK
- Issue Date
- 1999-07
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S420 - S423
- Abstract
- WO3 thin-film sensors were deposited by using a high-vacuum resistance heating evaporator at ambient temperature and at 300 degrees C, and then annealed at 500 degrees C for 4 hours in air. The annealed WO3 films had a polycrystalline triclinic structure. In the case of the films deposited at 300 degrees C, the microstructure of the annealed films, the NOx sensitivities, and the response characteristics were improved.
- Keywords
- SEMICONDUCTORS; SENSITIVITY; CO; SEMICONDUCTORS; SENSITIVITY; CO; NOx sensor; WO3 thin films; gas sensor
- ISSN
- 0374-4884
- URI
- https://pubs.kist.re.kr/handle/201004/142105
- Appears in Collections:
- KIST Article > Others
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