Effect of the microstructure on the NOx gas-sensing characteristics of WO3 thin-film sensors

Authors
Yoo, KSOh, YJKim, TSYoon, YSKim, CK
Issue Date
1999-07
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S420 - S423
Abstract
WO3 thin-film sensors were deposited by using a high-vacuum resistance heating evaporator at ambient temperature and at 300 degrees C, and then annealed at 500 degrees C for 4 hours in air. The annealed WO3 films had a polycrystalline triclinic structure. In the case of the films deposited at 300 degrees C, the microstructure of the annealed films, the NOx sensitivities, and the response characteristics were improved.
Keywords
SEMICONDUCTORS; SENSITIVITY; CO; SEMICONDUCTORS; SENSITIVITY; CO; NOx sensor; WO3 thin films; gas sensor
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/142105
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KIST Article > Others
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