Domain structure and electrical properties of β-BaB2O4 single crystals grown by direct czochralski method
- Authors
- Plokhikh, A.A.; Kim, C.-D.; Joo, G.-T.; Route, R.K.; Feigelson, R.S.
- Issue Date
- 1998-12
- Citation
- Journal of the Korean Physical Society, v.32, no.3 SUPPL., pp.S1231 - S1233
- Abstract
- Domain structure of β-BaB2O4 (BBO) crystals were determined by chemical etching. It was found that crystals grown by the direct Czochralski method show mostly single-domain. Pyroelectric and piezoelectric properties of BBO were studied. Pyroelectric coefficient of BBO has positive sign and the value of the coefficient is p = (1.27 ± 0.08) × 10-5 C/m2K. Piezoelectric strain coefficients were: d33 = 0.15 × 10-11 C/N, d22 = 0.22 × 10-11 C/N and d31 = 0.049 × 10-11 C/N. Electrical conductivity of BBO was measured as a function of temperature in range 340-720°C. Arrhenius activation energy was 1.68 eV.
- Keywords
- β-BaB2O4
- ISSN
- 0374-4884
- URI
- https://pubs.kist.re.kr/handle/201004/142720
- Appears in Collections:
- KIST Article > Others
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