Low temperature growth of oxide thin films by metalorganic chemical vapor deposition

Abstract

Thin films of ferroelectric materials of PbTiO3, Pb(Zr, Ti)O-3, BaTiO3 and TiO2-x were prepared by metalorganic chemical vapor deposition (MOCVD) on various substrates of SrTiO3, fused silica glass, p-Si, p-InSb, n-InP, p-GaAs, indium tin oxide-coated soda lime glass, Pt/Ti/SiO2/Si, RuO2/SiO2/Si and Pt/RuO2/SiO2/Si substrates. Low temperature growth at substrate temperature below 500 degreesC of dielectric/ferroelectric thin films via in-situ MOCVD process was carried out to study structural and electrical properties.