The characteristics before and after annealing of amorphous silicon films prepared by ECR plasma CVD

Abstract

The optical and electrical properties before and after annealing of amorphous silicon films, deposited by electron cyclotron resonance plasma chemical vapor deposition as a function of substrate temperature, were investigated. The properties of non-annealed Si films were improved with increasing substrate temperature. On the other hand, Hall mobility of annealed Si films decreased with increasing substrate temperature. (C) 1997 Published by Elsevier Science B.V.